BFR 740L3RH E6327 Infineon Technologies, BFR 740L3RH E6327 Datasheet - Page 10

• Manufacturer Part Number: BFR 740L3RH E6327
• Description: TRANS RF BIPO NPN 30MA TSLP-3
• Manufacturer: Infineon Technologies

Specifications of BFR 740L3RH E6327

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 4.7V
• Frequency - Transition: 42GHz
• Noise Figure (db Typ @ F): 0.5dB ~ 0.8dB @ 1.8GHz ~ 6Ghz
• Gain: 24.5dB
• Power - Max: 160mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 160 @ 25mA, 3V
• Current - Collector (ic) (max): 30mA
• Mounting Type: Surface Mount
• Package / Case: TSLP-3-1
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BFR740L3RHE6327INTR; BFR740L3RHE6327XT; SP000252393

Datasheet Revision History: 8 September 2010
This datasheet replaces the revision from 30 March 2007.
The product itself has not been changed and the device characteristics remain unchanged.
Only the product description and information available in the datasheet has been expanded
and updated.
Previous Revision 30 March 2007
Page
6,7
1
2
4
Subject (changes since last revision)
AEC Q101 label removed
Typical values for leakage currents included, values for maximum leakage
currents reduced
SPICE model parameters shifted from datasheet to the internet simulation data
section
NFmin and GammaOpt Charts updated
10
BFR740L3RH
2010-09-08