BFR 740L3RH E6327 Infineon Technologies, BFR 740L3RH E6327 Datasheet - Page 2

• Manufacturer Part Number: BFR 740L3RH E6327
• Description: TRANS RF BIPO NPN 30MA TSLP-3
• Manufacturer: Infineon Technologies

Specifications of BFR 740L3RH E6327

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 4.7V
• Frequency - Transition: 42GHz
• Noise Figure (db Typ @ F): 0.5dB ~ 0.8dB @ 1.8GHz ~ 6Ghz
• Gain: 24.5dB
• Power - Max: 160mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 160 @ 25mA, 3V
• Current - Collector (ic) (max): 30mA
• Mounting Type: Surface Mount
• Package / Case: TSLP-3-1
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BFR740L3RHE6327INTR; BFR740L3RHE6327XT; SP000252393

Maximum Ratings
Parameter
Collector-emitter voltage
T
T
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Base current
Total power dissipation
T
Junction temperature
Ambient temperature
Storage temperature
Thermal Resistance
Parameter
Junction - soldering point
1
2
Electrical Characteristics at T
Parameter
DC Characteristics
Collector-emitter breakdown voltage
I
Collector-emitter cutoff current
V
V
Collector-base cutoff current
V
Emitter-base cutoff current
V
DC current gain
I
C
C
T S is measured on the emitter lead at the soldering point to the pcb
For calculation of R
A
A
S
CE
CE
CB
EB
= 1 mA, I
= 25 mA, V
> 0°C
≤ 0°C
≤ 99°C
= 0.5 V, I
= 13 V, V
= 5 V, V
= 5 V, I
B
E
BE
= 0
C
= 0
CE
BE
= 0
= 0
thJA
= 3 V, pulse measured
= 0
please refer to Application Note AN077 Thermal Resistance
1)
2)
A
= 25°C, unless otherwise specified
2
Symbol
V
I
I
I
h
Symbol
V
V
V
V
I
I
P
T
T
T
Symbol
R
CES
CBO
EBO
C
B
J
A
Stg
FE
(BR)CEO
CEO
CES
CBO
EBO
tot
thJS
min.
160
4
-
-
-
-
-65 ... 150
-65 ... 150
Values
Value
Value
0.001
≤ 320
160
150
typ.
250
3.5
1.2
4.7
10
13
13
30
1
4
3
-
BFR740L3RH
max.
0.04
900
400
30
40
2010-09-08
-
Unit
V
µA
nA
-
Unit
V
mA
mW
°C
Unit
K/W