BFR 740L3RH E6327 Infineon Technologies, BFR 740L3RH E6327 Datasheet

Page 1

NPN Silicon Germanium RF Transistor • High gain ultra low noise RF transistor • Extremly small and flat leadless package, height 0.32 mm, ideal for modules • Provides outstanding performance for wireless applications GHz • Ideal for ...

Page 2

Maximum Ratings Parameter Collector-emitter voltage T > 0°C A ≤ 0° Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Base current 1) Total power dissipation ≤ 99° Junction temperature Ambient temperature Storage temperature Thermal Resistance Parameter ...

Page 3

Electrical Characteristics at T Parameter AC Characteristics (verified by random sampling) Transition frequency mA GHz C CE Collector-base capacitance MHz ...

Page 4

Total power dissipation P 180 160 140 120 100 [°C] S Permissible Pulse Load = ƒ totmax totDC → t ...

Page 5

Third order Intercept Point Ω ) (Output parameter 1.8 GHz ...

Page 6

Power gain parameter 0.5 1 1.5 2 2.5 V [V] CE Noise figure F ...

Page 7

Source impedance for min. noise figure vs. frequency BFR740L3RH 2010-09-08 ...

Page 8

SPICE GP (Gummel-Poon) For the SPICE Gummel Poon (GP) model as well as for the S-parameters (including noise parameters) please refer to our internet website www.infineon.com/rf.models. Please consult our website and download the latest versions before actually starting your design. ...

Page 9

Package Outline Pin 1 marking 1) Dimension applies to plated terminal Foot Print For board assembly information please refer to Infineon website "Packages" 0.6 0.225 0.15 Copper Marking Layout (Example) Standard Packing Reel ø180 mm = 15.000 ...

Page 10

Datasheet Revision History: 8 September 2010 This datasheet replaces the revision from 30 March 2007. The product itself has not been changed and the device characteristics remain unchanged. Only the product description and information available in the datasheet has been ...

Page 11

... For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. ...