NESG2101M05-A CEL, NESG2101M05-A Datasheet - Page 8

• Manufacturer Part Number: NESG2101M05-A
• Description: TRANS NPN 2GHZ M05
• Manufacturer: CEL

Specifications of NESG2101M05-A

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 5V
• Frequency - Transition: 17GHz
• Noise Figure (db Typ @ F): 0.6dB ~ 1.2dB @ 1GHz ~ 2GHz
• Gain: 11dB ~ 19dB
• Power - Max: 500mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 130 @ 15mA, 2V
• Current - Collector (ic) (max): 100mA
• Mounting Type: Surface Mount
• Package / Case: M05
• Continuous Collector Current: 35 mA
• Emitter- Base Voltage Vebo: 1.5 V
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Power Dissipation: 175 mW
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

TYPICAL PERFORMANCE CURVES
OUTPUT POWER, POWER GAIN, COLLECTOR CUR-
25
20
15
10
-5
5
0
-10
5
4
3
2
1
0
4
3
2
1
0
1
1
V
I
cq
V
f = 1 GHz
V
f = 2 GHz
CE
NOISE FIGURE, ASSOCIATED GAIN
NOISE FIGURE, ASSOCIATED GAIN
CE
CE
G
RENT, COLLECTOR EFFICIENCY
= 10 mA
P
= 3.6 V, f = 5.2 GHz
= 2 V
= 2 V
-5
vs. COLLECTOR CURRENT
vs. COLLECTOR CURRENT
Collector Current, I
Collector Current, I
vs. INPUT POWER
Input Power, P
0
P
out
10
10
5
I
C
NF
G
NF
G
η
a
a
C
in
10
(dBm)
C
C
(mA)
(mA)
15
100
20
100
120
100
80
60
40
20
0
20
15
10
5
0
25
20
15
10
5
0
(T
A
= 25°C)
5
4
3
2
1
0
4
3
2
1
0
4
3
2
1
0
1
1
1
V
f = 1 GHz
V
f = 3 GHz
NOISE FIGURE, ASSOCIATED GAIN
V
f = 2 GHz
NOISE FIGURE, ASSOCIATED GAIN
NOISE FIGURE, ASSOCIATED GAIN
CE
CE
CE
= 1 V
= 1 V
= 1 V
vs. COLLECTOR CURRENT
vs. COLLECTOR CURRENT
vs. COLLECTOR CURRENT
Collector Current, I
Collector Current, I
Collector Current, I
10
10
10
NF
G
NF
G
NF
G
a
a
a
C
C
C
(mA)
(mA)
(mA)
100
100
100
25
20
15
10
5
0
20
15
10
5
0
20
15
10
5
0