NESG2101M05-A CEL, NESG2101M05-A Datasheet - Page 6

• Manufacturer Part Number: NESG2101M05-A
• Description: TRANS NPN 2GHZ M05
• Manufacturer: CEL

Specifications of NESG2101M05-A

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 5V
• Frequency - Transition: 17GHz
• Noise Figure (db Typ @ F): 0.6dB ~ 1.2dB @ 1GHz ~ 2GHz
• Gain: 11dB ~ 19dB
• Power - Max: 500mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 130 @ 15mA, 2V
• Current - Collector (ic) (max): 100mA
• Mounting Type: Surface Mount
• Package / Case: M05
• Continuous Collector Current: 35 mA
• Emitter- Base Voltage Vebo: 1.5 V
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Power Dissipation: 175 mW
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

TYPICAL PERFORMANCE CURVES
-10
20
15
10
30
25
20
15
10
30
25
20
15
10
-5
5
0
5
0
5
0
1
1
1
INSERTION POWER GAIN, MAG, MSG
V
f = 1 GHz
V
f = 2 GHz
MSG
CE
CE
MSG vs. COLLECTOR CURRENT
INSERTION POWER GAIN, MAG,
MSG vs. COLLECTOR CURRENT
= 4 V
INSERTION POWER GAIN, MAG,
= 2 V
vs. COLLECTOR CURRENT
Collector Current, I
Collector Current, I
Collector Current, I
MAG
MSG
10
10
10
|S
|S
|S
21e
21e
21e
|
|
|
MAG
2
2
2
C
C
C
(mA)
(mA)
(mA)
V
f = 3 GHz
MSG
CE
= 2 V
100
100
100
MAG
(T
A
= 25°C)
-10
20
15
10
30
25
20
15
10
30
25
20
15
10
-5
5
0
5
0
5
0
1
1
1
OUTPUT POWER, COLLECTOR CUR-
MSG
V
f = 1 GHz
V
f = 2 GHz
CE
CE
MSG vs. COLLECTOR CURRENT
MSG vs. COLLECTOR CURRENT
INSERTION POWER GAIN, MAG,
INSERTION POWER GAIN, MAG,
= 3 V
= 3 V
RENT vs. INPUT POWER
Collector Current, I
Collector Current, I
Collector Current, I
MAG
MSG
10
10
10
|S
|S
|S
21e
21e
21e
|
|
|
2
2
MAG
2
C
C
C
(mA)
(mA)
(mA)
V
f = 3 GHz
MSG
CE
= 1 V
100
100
100
MAG