NESG2101M05-A CEL, NESG2101M05-A Datasheet - Page 7

• Manufacturer Part Number: NESG2101M05-A
• Description: TRANS NPN 2GHZ M05
• Manufacturer: CEL

Specifications of NESG2101M05-A

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 5V
• Frequency - Transition: 17GHz
• Noise Figure (db Typ @ F): 0.6dB ~ 1.2dB @ 1GHz ~ 2GHz
• Gain: 11dB ~ 19dB
• Power - Max: 500mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 130 @ 15mA, 2V
• Current - Collector (ic) (max): 100mA
• Mounting Type: Surface Mount
• Package / Case: M05
• Continuous Collector Current: 35 mA
• Emitter- Base Voltage Vebo: 1.5 V
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Power Dissipation: 175 mW
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

TYPICAL PERFORMANCE CURVES
OUTPUT POWER, POWER GAIN, COLLECTOR
-10
25
20
15
10
20
15
10
30
25
20
15
10
-5
-5
5
0
5
0
5
0
-15
1
1
INSERTION POWER GAIN, MAG, MSG
INSERTION POWER GAIN, MAG, MSG
CURRENT, COLLECTOR EFFICIENCY
V
f = 2 GHz
MSG
V
I
cq
CE
CE
G
= 10 mA
P
= 4 V
= 3.6 V, f = 2 GHz
-10
vs. COLLECTOR CURRENT
vs. COLLECTOR CURRENT
Collector Current, I
Collector Current, I
P
Input Power, P
MAG
out
vs. INPUT POWER
-5
MSG
10
10
0
|S
|S
I
C
21e
21e
in
η
MAG
|
|
2
C
2
(dBm)
5
C
C
(mA)
(mA)
V
f = 3 GHz
CE
10
= 4 V
100
15
100
(T
120
100
80
60
40
20
0
A
= 25°C)
OUTPUT POWER, POWER GAIN, COLLECTOR
-10
OUTPUT POWER, POWER GAIN, COLLECTOR
30
25
20
15
10
25
20
15
10
20
15
10
-5
-5
5
0
5
0
5
0
-20
-15
1
MSG
CURRENT, COLLECTOR EFFICIENCY
V
I
V
I
cq
cq
CURRENT, COLLECTOR EFFICIENCY
CE
CE
G
G
= 10 mA
= 10 mA
P
P
MSG vs. COLLECTOR CURRENT
= 3.6 V, f = 1 GHz
= 3.6 V, f = 3 GHz
INSERTION POWER GAIN, MAG,
-10
-15
Collector Current, I
P
MAG
out
Input Power, P
Input Power, P
vs. INPUT POWER
-10
vs. INPUT POWER
-5
P
out
-5
10
0
|S
I
I
C
C
21e
η
η
|
C
2
C
in
in
5
0
(dBm)
(dBm)
C
(mA)
V
f = 3 GHz
CE
10
5
= 3 V
10
15
100
120
100
80
60
40
20
0
120
100
80
60
40
20
0