NESG2101M05-A CEL, NESG2101M05-A Datasheet - Page 10

• Manufacturer Part Number: NESG2101M05-A
• Description: TRANS NPN 2GHZ M05
• Manufacturer: CEL

Specifications of NESG2101M05-A

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 5V
• Frequency - Transition: 17GHz
• Noise Figure (db Typ @ F): 0.6dB ~ 1.2dB @ 1GHz ~ 2GHz
• Gain: 11dB ~ 19dB
• Power - Max: 500mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 130 @ 15mA, 2V
• Current - Collector (ic) (max): 100mA
• Mounting Type: Surface Mount
• Package / Case: M05
• Continuous Collector Current: 35 mA
• Emitter- Base Voltage Vebo: 1.5 V
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Power Dissipation: 175 mW
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

TYPICAL PERFORMANCE CURVES
2.0 ±0.1
OUTLINE DIMENSIONS
PIN CONNECTIONS
1. Base
2. Emitter
3. Collector
4. Emitter
FLAT LEAD 4-PIN THIN TYPE SUPER MINIMOLD
4
3
2
1
0
1
V
f = 3 GHz
0.59±0.05
CE
NOISE FIGURE, ASSOCIATED GAIN
0.30
= 4 V
vs. COLLECTOR CURRENT
PACKAGE OUTLINE M05
-0.05
+0.1
Collector Current, I
4
3
10
2.05±0.1
1.25±0.1
NF
G
a
(Units in mm)
C
(mA)
2
1
100
0.65
0.65
20
15
10
5
0
0.11
(T
A
-0.05
= 25°C)
+0.1
1.30