NESG2101M05-A CEL, NESG2101M05-A Datasheet - Page 14

• Manufacturer Part Number: NESG2101M05-A
• Description: TRANS NPN 2GHZ M05
• Manufacturer: CEL

Specifications of NESG2101M05-A

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 5V
• Frequency - Transition: 17GHz
• Noise Figure (db Typ @ F): 0.6dB ~ 1.2dB @ 1GHz ~ 2GHz
• Gain: 11dB ~ 19dB
• Power - Max: 500mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 130 @ 15mA, 2V
• Current - Collector (ic) (max): 100mA
• Mounting Type: Surface Mount
• Package / Case: M05
• Continuous Collector Current: 35 mA
• Emitter- Base Voltage Vebo: 1.5 V
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Power Dissipation: 175 mW
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

NONLINEAR MODEL
SCHEMATIC
Life Support Applications
These NEC products are not intended for use in life support devices, appliances, or systems where the malfunction of these products can reasonably
be expected to result in personal injury. The customers of CEL using or selling these products for use in such applications do so at their own risk and
agree to fully indemnify CEL for all damages resulting from such improper use or sale.
BJT NONLINEAR MODEL PARAMETERS
(1) Gummel-Poon Model
Parameters
RBM
VAF
CJE
MJE
CJC
VJC
VJE
ISE
VAR
IKR
ISC
IRB
IKF
NR
NC
RC
NF
NE
BR
RE
RB
BF
IS
11.67e-15
1.024e-18
1.461e-12
489.9e-15
3.64e-15
54.57e-3
309.7
1.079
233.9
1.648
20.01
1.080
2.782
0.798
0.137
0.605
1.35
0.05
1e-4
Q1
1.6
2.2
4.8
56
Parameters
XCJC
MJC
MJS
XTB
CJS
VJS
XTF
VTF
PTF
ITF
XTI
EG
FC
TF
TR
KF
AF
Base
L
BPKG
C
BEPKG
4e-12
0.149
0.75
1.11
Q1
0.8
0.5
1.3
5.2
10
20
1
0
0
5
0
0
1
L
B
(1)
C
C
CBPKG
CB
Emitter
Q
1
L
L
EPKG
E
MODEL TEST CONDITIONS
Frequency:
Bias:
Date:
ADDITIONAL PARAMETERS
C
CE
L
C
CPKG
CEPKG
Parameters
C
C
C
0.1 to 6 GHz
V
09/2003
L
L
L
CBPKG
CEPKG
BEPKG
C
C
CPKG
CE
BPKG
EPKG
L
L
CB
CE
B
E
= 2 V, I
Collecto r
C
= 5 mA to 40 mA
A Business Partner of NEC Compound Semiconductor Devices, Ltd.
NESG2101M05
0.16 nH
0.17 nH
0.15 nH
0.01 pF
0.45 pF
0.02 pF
0.05 pF
0.8 nH
1.2 nH
0.2 pF
05/11/2005