BFS520,115 NXP Semiconductors, BFS520,115 Datasheet - Page 9

• Manufacturer Part Number: BFS520,115
• Description: TRANS NPN 70MA 15V 9GHZ SOT323
• Manufacturer: NXP Semiconductors

Specifications of BFS520,115

• Package / Case: SC-70-3, SOT-323-3
• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 15V
• Frequency - Transition: 9GHz
• Noise Figure (db Typ @ F): 1.1dB ~ 2.1dB @ 900MHz
• Power - Max: 300mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 60 @ 20mA, 6V
• Current - Collector (ic) (max): 70mA
• Mounting Type: Surface Mount
• Dc Current Gain Hfe Max: 60 @ 20mA @ 6V
• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Configuration: Single
• Transistor Polarity: NPN
• Maximum Operating Frequency: 9000 MHz (Typ)
• Collector- Emitter Voltage Vceo Max: 15 V
• Emitter- Base Voltage Vebo: 2.5 V
• Continuous Collector Current: 0.07 A
• Power Dissipation: 300 mW
• Maximum Operating Temperature: + 175 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gain: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 568-1654-2; 934021420115; BFS520 T/R

NXP Semiconductors
September 1995
handbook, full pagewidth
handbook, full pagewidth
NPN 9 GHz wideband transistor
I
I
Z
C
C
o
= 20 mA; V
= 20 mA; V
= 50 .
CE
CE
= 6 V.
= 6 V;
Fig.16 Common emitter reverse transmission coefficient (S
180°
180°
Fig.17 Common emitter output reflection coefficient (S
0.5
0
−135°
−135°
0.4
135°
135°
0.2
0.2
0.2
0.3
0.5
0.5
0.2
0.5
0.1
−90°
−90°
90°
90°
9
1
1
1
3 GHz
40 MHz
3 GHz
2
2
2
5
40 MHz
−45°
45°
−45°
45°
5
5
MRC061
MRC060
22
0°
0°
).
12
).
1.0
0.8
0.6
0.4
0.2
0
1.0
Product specification
BFS520