BFS520,115 NXP Semiconductors, BFS520,115 Datasheet
BFS520,115
Specifications of BFS520,115
934021420115
BFS520 T/R
Available stocks
Related parts for BFS520,115
BFS520,115 Summary of contents
Page 1
DATA SHEET BFS520 NPN 9 GHz wideband transistor Product specification DISCRETE SEMICONDUCTORS September 1995 ...
Page 2
... NXP Semiconductors NPN 9 GHz wideband transistor FEATURES High power gain Low noise figure High transition frequency Gold metallization ensures excellent reliability SOT323 envelope. DESCRIPTION NPN transistor in a plastic SOT323 envelope. QUICK REFERENCE DATA SYMBOL PARAMETER V collector-base voltage ...
Page 3
... NXP Semiconductors NPN 9 GHz wideband transistor THERMAL RESISTANCE SYMBOL PARAMETER R thermal resistance from junction to th j-s soldering point Note the temperature at the soldering point of the collector tab. s CHARACTERISTICS = 25 C, unless otherwise specified SYMBOL PARAMETER I collector cut-off current CBO h DC current gain ...
Page 4
... NXP Semiconductors NPN 9 GHz wideband transistor 400 handbook, halfpage P tot (mW) 300 200 100 100 Fig.2 Power derating curve. 0.7 handbook, halfpage C re (pF) 0.6 0.5 0.4 0.3 0.2 0 MHz. C Fig.4 Feedback capacitance as a function of collector-base voltage. September 1995 MRC030 - 1 handbook, halfpage 150 ...
Page 5
... NXP Semiconductors NPN 9 GHz wideband transistor In Figs maximum unilateral power gain; UM MSG = maximum stable gain; G gain. 20 handbook, halfpage G UM (dB 900 MHz amb Fig.6 Maximum unilateral power gain as a function of collector current. 50 handbook, halfpage gain (dB MSG −2 − mA amb Fig.8 Gain as a function of frequency. ...
Page 6
... NXP Semiconductors NPN 9 GHz wideband transistor 4 handbook, halfpage F (dB amb Fig.10 Minimum noise figure as a function of collector current. September 1995 MRC029 handbook, halfpage F (dB GHz 900 MHz 500 MHz (mA Fig.11 Minimum noise figure as a function of 6 Product specification − C. ...
Page 7
... NXP Semiconductors NPN 9 GHz wideband transistor handbook, full pagewidth pot. unst. region 180° mA 900 MHz handbook, full pagewidth 180° G max = 9 mA GHz September 1995 stability circle 90° 1 135° 0.5 0.2 F min = Γ OPT 0 ...
Page 8
... NXP Semiconductors NPN 9 GHz wideband transistor handbook, full pagewidth 180° mA Fig.14 Common emitter input reflection coefficient (S handbook, full pagewidth 180° mA Fig.15 Common emitter forward transmission coefficient (S September 1995 90° 1 135° 0.5 0.2 3 GHz 0.2 0 0.2 0.5 −135° ...
Page 9
... NXP Semiconductors NPN 9 GHz wideband transistor handbook, full pagewidth 180° mA Fig.16 Common emitter reverse transmission coefficient (S handbook, full pagewidth 180° mA Fig.17 Common emitter output reflection coefficient (S September 1995 90° 135° 3 GHz 40 MHz 0.5 0.4 0.3 0.2 0.1 − ...
Page 10
... NXP Semiconductors NPN 9 GHz wideband transistor PACKAGE OUTLINE Plastic surface-mounted package; 3 leads DIMENSIONS (mm are the original dimensions UNIT b p max 1.1 0.4 0.25 mm 0.1 0.8 0.3 0.10 OUTLINE VERSION IEC SOT323 September 1995 scale 2.2 1.35 2.2 1.3 0.65 1.8 1.15 2 ...
Page 11
... In no event shall NXP Semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation - lost profits, lost savings, business interruption, costs related to the ...
Page 12
... NXP Semiconductors’ specifications such use shall be solely at customer’s own risk, and (c) customer fully indemnifies NXP Semiconductors for any liability, damages or failed product claims resulting from customer design and use of the product for automotive applications beyond NXP Semiconductors’ ...
Page 13
... Interface, Security and Digital Processing expertise Customer notification This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal definitions and disclaimers. No changes were made to the technical content, except for package outline drawings which were updated to the latest version. ...