BFS520,115 NXP Semiconductors, BFS520,115 Datasheet - Page 3

• Manufacturer Part Number: BFS520,115
• Description: TRANS NPN 70MA 15V 9GHZ SOT323
• Manufacturer: NXP Semiconductors

Specifications of BFS520,115

• Package / Case: SC-70-3, SOT-323-3
• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 15V
• Frequency - Transition: 9GHz
• Noise Figure (db Typ @ F): 1.1dB ~ 2.1dB @ 900MHz
• Power - Max: 300mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 60 @ 20mA, 6V
• Current - Collector (ic) (max): 70mA
• Mounting Type: Surface Mount
• Dc Current Gain Hfe Max: 60 @ 20mA @ 6V
• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Configuration: Single
• Transistor Polarity: NPN
• Maximum Operating Frequency: 9000 MHz (Typ)
• Collector- Emitter Voltage Vceo Max: 15 V
• Emitter- Base Voltage Vebo: 2.5 V
• Continuous Collector Current: 0.07 A
• Power Dissipation: 300 mW
• Maximum Operating Temperature: + 175 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gain: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 568-1654-2; 934021420115; BFS520 T/R

NXP Semiconductors
THERMAL RESISTANCE
Note
1. T
CHARACTERISTICS
T
Notes
1. G
2. I
September 1995
R
I
h
C
C
C
f
G
S
F
P
ITO
j
CBO
T
SYMBOL
FE
= 25 C, unless otherwise specified.
L1
NPN 9 GHz wideband transistor
th j-s
e
c
re
SYMBOL
UM
21
f
C
p
G

s
UM
2
= 900 MHz; f
UM
= 20 mA; V
is the temperature at the soldering point of the collector tab.
is the maximum unilateral power gain, assuming S
=
10 log
collector cut-off current
DC current gain
emitter capacitance
collector capacitance
feedback capacitance
transition frequency
maximum unilateral power gain
(note 1)
insertion power gain
noise figure
output power at 1 dB gain
compression
third order intercept point
thermal resistance from junction to
soldering point
CE
q
--------------------------------------------------------- - dB.

= 902 MHz; measured at f
= 6 V; R
1
–
PARAMETER
S
11
S
L
PARAMETER
2
 1
21
= 50 ; f = 900 MHz; T

2
–
S
22
2

(2pq)
I
I
I
I
I
I
T
I
T
I
T
I
T

f = 900 MHz; T

f = 900 MHz; T

f = 2 GHz; T
I
f = 900 MHz; T
note 2
E
C
C
E
C
C
C
C
C
c
amb
amb
amb
amb
s
s
s
= 20 mA; V
= 0; V
= i
= 20mA; V
= i
= 0; V
= 20 mA; V
= 20 mA; V
= 20 mA; V
= 20 mA; V
= 
= 
= 
e
c
= 898 MHz and at f
= 25 C
= 25 C
= 25 C
= 25 C
amb
opt
opt
opt
= 0; V
= 0; V
CE
CB
; I
; I
; I
= 25 C;
C
C
C
up to T
= 6 V
= 6 V; f = 1 MHz
3
12
= 5 mA; V
= 20 mA; V
= 5 mA; V
amb
EB
CB
CONDITIONS
CE
CE
CE
CE
CE
CE
is zero and
amb
amb
amb
= 0.5 V; f = 1 MHz
= 6 V; f = 1 MHz
= 6 V
= 25 C
= 6 V; R
= 6 V; f = 1 GHz;
= 6 V; f = 900 MHz;
= 6 V; f = 2 GHz;
= 6 V; f = 900 MHz;
s
CONDITIONS
= 25 C
= 25 C
= 25 C
= 118 C; note 1
CE
CE
CE
(2qp)
L
= 6 V;
= 6 V;
= 50 ;
= 6 V;
= 904 MHz.

60






13





MIN.
THERMAL RESISTANCE

120
1
0.5
0.4
9
15
9
14
1.1
1.6
1.9
17
26
TYP.
Product specification
190 K/W
BFS520
50
250







1.6
2.1



MAX.
nA
pF
pF
pF
GHz
dB
dB
dB
dB
dB
dB
dBm
dBm
UNIT