BFS520,115 NXP Semiconductors, BFS520,115 Datasheet - Page 2

• Manufacturer Part Number: BFS520,115
• Description: TRANS NPN 70MA 15V 9GHZ SOT323
• Manufacturer: NXP Semiconductors

Specifications of BFS520,115

• Package / Case: SC-70-3, SOT-323-3
• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 15V
• Frequency - Transition: 9GHz
• Noise Figure (db Typ @ F): 1.1dB ~ 2.1dB @ 900MHz
• Power - Max: 300mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 60 @ 20mA, 6V
• Current - Collector (ic) (max): 70mA
• Mounting Type: Surface Mount
• Dc Current Gain Hfe Max: 60 @ 20mA @ 6V
• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Configuration: Single
• Transistor Polarity: NPN
• Maximum Operating Frequency: 9000 MHz (Typ)
• Collector- Emitter Voltage Vceo Max: 15 V
• Emitter- Base Voltage Vebo: 2.5 V
• Continuous Collector Current: 0.07 A
• Power Dissipation: 300 mW
• Maximum Operating Temperature: + 175 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gain: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 568-1654-2; 934021420115; BFS520 T/R

NXP Semiconductors
FEATURES
 High power gain
 Low noise figure
 High transition frequency
 Gold metallization ensures
 SOT323 envelope.
DESCRIPTION
NPN transistor in a plastic SOT323
envelope.
QUICK REFERENCE DATA
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 134).
Note
1. T
September 1995
V
V
I
P
h
f
G
F
V
V
V
I
P
T
T
SYMBOL
C
T
C
SYMBOL
FE
excellent reliability
stg
j
CBO
CES
tot
CBO
CES
EBO
tot
NPN 9 GHz wideband transistor
UM
s
is the temperature at the soldering point of the collector tab.
collector-base voltage
collector-emitter voltage
DC collector current
total power dissipation
DC current gain
transition frequency
maximum unilateral power gain
noise figure
collector-base voltage
collector-emitter voltage
emitter-base voltage
DC collector current
total power dissipation
storage temperature
junction temperature
PARAMETER
PARAMETER
It is intended for wideband
applications such as satellite TV
tuners, cellular phones, cordless
phones, pagers etc., with signal
frequencies up to 2 GHz.
PINNING
PIN
1
2
3
open emitter
R
up to T
I
I
T
I
T
I
T
C
C
c
c
amb
amb
amb
BE
= 20 mA; V
= 5 mA; V
= 20 mA; V
= 20 mA; V
base
emitter
collector
= 0
open emitter
R
open collector
up to T
= 25 C
= 25 C
= 25 C
BE
s
Code: N2
= 118 C; note 1
DESCRIPTION
= 0
CONDITIONS
2
CE
s
CE
= 118 C; note 1
CE
CE
= 6 V; f = 900 MHz;
= 6 V; f = 900 MHz;
= 6 V; T
= 6 V; f = 1 GHz;
CONDITIONS
j
= 25 C
handbook, 2 columns




60



MIN.
Top view





65

Fig.1 SOT323.
MIN.



120
9
15
1.1

TYP.
Product specification
1
20
15
2.5
70
300
150
175
3
MAX.
20
15
70
300
250


1.6
MAX.
BFS520
MBC870
2
V
V
V
mA
mW
C
C
UNIT
V
V
mA
mW
GHz
dB
dB
UNIT