BFR93A,215 NXP Semiconductors, BFR93A,215 Datasheet - Page 3

• Manufacturer Part Number: BFR93A,215
• Description: TRANS NPN 35MA 12V 6GHZ SOT23
• Manufacturer: NXP Semiconductors

Specifications of BFR93A,215

• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 12V
• Frequency - Transition: 6GHz
• Noise Figure (db Typ @ F): 1.9dB ~ 3dB @ 1GHz ~ 2GHz
• Power - Max: 300mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 40 @ 30mA, 5V
• Current - Collector (ic) (max): 35mA
• Mounting Type: Surface Mount
• Dc Collector/base Gain Hfe Min: 90
• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Configuration: Single
• Transistor Polarity: NPN
• Maximum Operating Frequency: 6 GHz
• Collector- Emitter Voltage Vceo Max: 12 V
• Emitter- Base Voltage Vebo: 2 V
• Continuous Collector Current: 35 mA
• Power Dissipation: 300 mW
• Number Of Elements: 1
• Collector-emitter Voltage: 12V
• Collector-base Voltage: 15V
• Emitter-base Voltage: 2V
• Collector Current (dc) (max): 35mA
• Dc Current Gain (min): 40
• Frequency (max): 6GHz
• Operating Temp Range: -65C to 175C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 3
• Package Type: TO-236AB
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gain: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 568-1651-2; 933551570215; BFR93A T/R

NXP Semiconductors
THERMAL CHARACTERISTICS
Note
1. T
CHARACTERISTICS
T
Notes
1. G
2. Measured on the same die in a SOT37 package (BFR91A).
3. d
4. I
1997 Oct 29
R
I
h
C
C
C
f
G
F
V
d
SYMBOL
SYMBOL
j
CBO
T
FE
2
= 25 C unless otherwise specified.
O
NPN 6 GHz wideband transistor
th j-s
c
e
re
UM
V
V
V
measured at f
V
V
measured at f
C
s
im
p
q
r
p
q
UM
= 30 mA; V
= V
is the temperature at the soldering point of the collector pin.
= V
= V
= 200 mV at f
= 200 mV at f
= 60 dB (DIN 45004B); I
is the maximum unilateral power gain, assuming S
O
O
O
6 dB at f
at d
6 dB at f
thermal resistance from junction to soldering point
collector cut-off current
DC current gain
collector capacitance
emitter capacitance
feedback capacitance
transition frequency
maximum unilateral power gain
(note 1)
noise figure (note 2)
output voltage
second order intermodulation
distortion
im
CE
p
p
= 60 dB; f
+ f
+ f
p
q
= 8 V; R
r
q
q
q
= 250 MHz;
= 560 MHz;
= 805.25 MHz;
PARAMETER
 f
= 810 MHz.
= 803.25 MHz;
r
= 793.25 MHz.
L
p
= 75 ; T
PARAMETER
= 795.25 MHz;
C
= 30 mA; V
amb
= 25 C;
CE
= 8 V; R
I
I
I
I
I
T
I
I
T
I
T
I

I

notes 2 and 3
notes 2 and 4
E
C
E
C
C
C
C
C
C
C
amb
amb
amb
s
s
= 0; V
= i
= 30 mA; V
= i
= i
= 30 mA; V
= 30 mA; V
= 30 mA; V
= 5 mA; V
= 5 mA; V
= 
= 
e
c
c
= 25 C
= 25 C
= 25 C
opt
opt
= 0; V
= 0; V
= 0; V
L
CB
; T
; T
3
= 75 ; T
12
amb
amb
= 5 V
CONDITIONS
is zero and
CB
EB
CE
CE
CE
CE
CE
CE
CE
= 25 C
= 25 C
T
= 0.5 V; f = 1 MHz
= 5 V; f = 1 MHz
= 5 V; f = 1 MHz;
= 8 V; f = 1 GHz;
= 8 V; f = 2 GHz;
s
= 5 V
= 5 V; f = 500 MHz
= 8 V; f = 1 GHz;
= 8 V; f = 2 GHz;
 95 C; note 1
amb
CONDITIONS
= 25 C;
G
UM
=
10 log

40



4.5






--------------------------------------------------------- - dB

MIN.
1
VALUE
–
260
S
11

90
0.7
1.9
0.6
6
13
7
1.9
3
425
50
TYP.
Product specification
S
2
 1
21

2
–
BFR93A
50











MAX. UNIT
S
22
UNIT
K/W
2

nA
pF
pF
pF
GHz
dB
dB
dB
dB
mV
dB
.