BFR93A,215 NXP Semiconductors, BFR93A,215 Datasheet - Page 2
BFR93A,215
Manufacturer Part Number
BFR93A,215
Description
TRANS NPN 35MA 12V 6GHZ SOT23
Manufacturer
NXP Semiconductors
Datasheet
1.BFR93A215.pdf
(13 pages)
Specifications of BFR93A,215
Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Transistor Type
NPN
Voltage - Collector Emitter Breakdown (max)
12V
Frequency - Transition
6GHz
Noise Figure (db Typ @ F)
1.9dB ~ 3dB @ 1GHz ~ 2GHz
Power - Max
300mW
Dc Current Gain (hfe) (min) @ Ic, Vce
40 @ 30mA, 5V
Current - Collector (ic) (max)
35mA
Mounting Type
Surface Mount
Dc Collector/base Gain Hfe Min
90
Minimum Operating Temperature
- 65 C
Mounting Style
SMD/SMT
Configuration
Single
Transistor Polarity
NPN
Maximum Operating Frequency
6 GHz
Collector- Emitter Voltage Vceo Max
12 V
Emitter- Base Voltage Vebo
2 V
Continuous Collector Current
35 mA
Power Dissipation
300 mW
Number Of Elements
1
Collector-emitter Voltage
12V
Collector-base Voltage
15V
Emitter-base Voltage
2V
Collector Current (dc) (max)
35mA
Dc Current Gain (min)
40
Frequency (max)
6GHz
Operating Temp Range
-65C to 175C
Operating Temperature Classification
Military
Mounting
Surface Mount
Pin Count
3
Package Type
TO-236AB
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Gain
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
568-1651-2
933551570215
BFR93A T/R
933551570215
BFR93A T/R
NXP Semiconductors
FEATURES
High power gain
Low noise figure
Very low intermodulation distortion.
APPLICATIONS
RF wideband amplifiers and
QUICK REFERENCE DATA
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Note
1. T
1997 Oct 29
V
V
I
P
C
f
G
F
V
V
V
V
I
P
T
T
SYMBOL
SYMBOL
C
T
C
oscillators.
stg
j
CBO
CEO
tot
O
CBO
CEO
EBO
tot
NPN 6 GHz wideband transistor
re
UM
s
is the temperature at the soldering point of the collector pin.
collector-base voltage
collector-emitter voltage
collector current (DC)
total power dissipation
feedback capacitance
transition frequency
maximum unilateral power gain I
noise figure
output voltage
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
total power dissipation
storage temperature
junction temperature
PARAMETER
PARAMETER
DESCRIPTION
NPN wideband transistor in a plastic
SOT23 package.
PNP complement: BFT93.
PINNING
PIN
1
2
3
open emitter
open base
T
I
I
I
I
T
d
R
f
open emitter
open base
open collector
T
C
C
C
C
C
p
im
s
amb
s
L
+ f
= 0; V
= 30 mA; V
= 30 mA; V
= 30 mA; V
= 5 mA; V
95 C
95 C; note 1
= 75 ; T
= 60 dB; I
q
= 25 C
base
emitter
collector
f
CE
r
= 793.25 MHz
DESCRIPTION
= 5 V; f = 1 MHz
CE
amb
2
CE
CE
CE
C
= 8 V; f = 1 GHz;
CONDITIONS
CONDITIONS
= 30 mA; V
= 25 C;
= 5 V; f = 500 MHz
= 8 V; f = 1 GHz; T
= 8 V; f = 2 GHz; T
CE
= 8 V;
s
lfpage
amb
amb
=
Marking code: R2p.
opt
= 25 C 13
= 25 C 7
;
Top view
1
Fig.1 SOT23.
0.6
6
1.9
425
65
TYP.
MIN.
Product specification
3
15
12
35
300
15
12
2
35
300
+150
+175
BFR93A
MSB003
MAX.
MAX.
2
V
V
mA
mW
pF
GHz
dB
dB
dB
mV
V
V
V
mA
mW
C
C
UNIT
UNIT