BFR93A,215 NXP Semiconductors, BFR93A,215 Datasheet - Page 2

• Manufacturer Part Number: BFR93A,215
• Description: TRANS NPN 35MA 12V 6GHZ SOT23
• Manufacturer: NXP Semiconductors

Specifications of BFR93A,215

• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 12V
• Frequency - Transition: 6GHz
• Noise Figure (db Typ @ F): 1.9dB ~ 3dB @ 1GHz ~ 2GHz
• Power - Max: 300mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 40 @ 30mA, 5V
• Current - Collector (ic) (max): 35mA
• Mounting Type: Surface Mount
• Dc Collector/base Gain Hfe Min: 90
• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Configuration: Single
• Transistor Polarity: NPN
• Maximum Operating Frequency: 6 GHz
• Collector- Emitter Voltage Vceo Max: 12 V
• Emitter- Base Voltage Vebo: 2 V
• Continuous Collector Current: 35 mA
• Power Dissipation: 300 mW
• Number Of Elements: 1
• Collector-emitter Voltage: 12V
• Collector-base Voltage: 15V
• Emitter-base Voltage: 2V
• Collector Current (dc) (max): 35mA
• Dc Current Gain (min): 40
• Frequency (max): 6GHz
• Operating Temp Range: -65C to 175C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 3
• Package Type: TO-236AB
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gain: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 568-1651-2; 933551570215; BFR93A T/R

NXP Semiconductors
FEATURES
 High power gain
 Low noise figure
 Very low intermodulation distortion.
APPLICATIONS
 RF wideband amplifiers and
QUICK REFERENCE DATA
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Note
1. T
1997 Oct 29
V
V
I
P
C
f
G
F
V
V
V
V
I
P
T
T
SYMBOL
SYMBOL
C
T
C
oscillators.
stg
j
CBO
CEO
tot
O
CBO
CEO
EBO
tot
NPN 6 GHz wideband transistor
re
UM
s
is the temperature at the soldering point of the collector pin.
collector-base voltage
collector-emitter voltage
collector current (DC)
total power dissipation
feedback capacitance
transition frequency
maximum unilateral power gain I
noise figure
output voltage
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
total power dissipation
storage temperature
junction temperature
PARAMETER
PARAMETER
DESCRIPTION
NPN wideband transistor in a plastic
SOT23 package.
PNP complement: BFT93.
PINNING
PIN
1
2
3
open emitter
open base
T
I
I
I
I
T
d
R
f
open emitter
open base
open collector
T
C
C
C
C
C
p
im
s
amb
s
L
+ f
= 0; V
= 30 mA; V
= 30 mA; V
= 30 mA; V
= 5 mA; V
 95 C
 95 C; note 1
= 75 ; T
= 60 dB; I
q
= 25 C
base
emitter
collector
 f
CE
r
= 793.25 MHz
DESCRIPTION
= 5 V; f = 1 MHz
CE
amb
2
CE
CE
CE
C
= 8 V; f = 1 GHz; 
CONDITIONS
CONDITIONS
= 30 mA; V
= 25 C;
= 5 V; f = 500 MHz
= 8 V; f = 1 GHz; T
= 8 V; f = 2 GHz; T
CE
= 8 V;
s
lfpage
amb
amb
= 
Marking code: R2p.
opt
= 25 C 13
= 25 C 7
;
Top view
1
Fig.1 SOT23.




0.6
6
1.9
425





65

TYP.
MIN.
Product specification
3
15
12
35
300






15
12
2
35
300
+150
+175
BFR93A
MSB003
MAX.
MAX.
2
V
V
mA
mW
pF
GHz
dB
dB
dB
mV
V
V
V
mA
mW
C
C
UNIT
UNIT