BLF4G10LS-120,112 NXP Semiconductors, BLF4G10LS-120,112 Datasheet - Page 9

• Manufacturer Part Number: BLF4G10LS-120,112
• Description: BASESTATION FINAL 1GHZ SOT502B
• Manufacturer: NXP Semiconductors

Specifications of BLF4G10LS-120,112

• Package / Case: SOT502B
• Transistor Type: LDMOS
• Frequency: 920MHz
• Gain: 19dB
• Voltage - Rated: 65V
• Current Rating: 12A
• Current - Test: 650mA
• Voltage - Test: 28V
• Power - Output: 48W
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.09 Ohms
• Drain-source Breakdown Voltage: 65 V
• Gate-source Breakdown Voltage: 15 V
• Continuous Drain Current: 12 A
• Maximum Operating Temperature: + 200 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 65 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 568-2404; 934058478112; BLF4G10LS-120; BLF4G10LS-120

Philips Semiconductors
9. Package outline
Fig 11. Package outline SOT502B
9397 750 14547
Product data sheet
Earless flanged LDMOST ceramic package; 2 leads
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)
inches
UNIT
mm
VERSION
OUTLINE
SOT502B
0.186
0.135
4.72
3.43
A
12.83
12.57
0.505
0.495
b
H
0.006
0.003
0.15
0.08
c
U 2
L
A
IEC
20.02
19.61
0.788
0.772
D
19.96
19.66
0.786
0.774
D 1
0.374
0.366
9.50
9.30
JEDEC
E
U 1
D 1
D
b
0.375
0.364
9.53
9.25
REFERENCES
E 1
Rev. 01 — 10 January 2006
3
1
2
0.045
0.035
1.14
0.89
0
F
19.94
18.92
0.785
0.745
JEITA
scale
H
w 2
5
D
M
0.210
0.170
F
5.33
4.32
D
10 mm
L
M
0.067
0.057
1.70
1.45
Q
20.70
20.45
0.815
0.805
U 1
0.390
0.380
9.91
9.65
U 2
BLF4G10LS-120
E 1
UHF power LDMOS transistor
PROJECTION
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
0.010
EUROPEAN
0.25
w 2
c
Q
E
ISSUE DATE
99-12-28
03-01-10
SOT502B
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