BLF4G10LS-120,112 NXP Semiconductors, BLF4G10LS-120,112 Datasheet - Page 4

• Manufacturer Part Number: BLF4G10LS-120,112
• Description: BASESTATION FINAL 1GHZ SOT502B
• Manufacturer: NXP Semiconductors

Specifications of BLF4G10LS-120,112

• Package / Case: SOT502B
• Transistor Type: LDMOS
• Frequency: 920MHz
• Gain: 19dB
• Voltage - Rated: 65V
• Current Rating: 12A
• Current - Test: 650mA
• Voltage - Test: 28V
• Power - Output: 48W
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.09 Ohms
• Drain-source Breakdown Voltage: 65 V
• Gate-source Breakdown Voltage: 15 V
• Continuous Drain Current: 12 A
• Maximum Operating Temperature: + 200 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 65 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 568-2404; 934058478112; BLF4G10LS-120; BLF4G10LS-120

Philips Semiconductors
9397 750 14547
Product data sheet
Fig 1. One-tone CW power gain and drain efficiency
Fig 3. Intermodulation distortion as a function of
(dBc)
(dB)
IMD
G
p
20
18
16
14
12
10
20
40
60
80
0
V
f = 960 MHz
as functions of load power; typical values
V
f = 960 MHz
average load power; typical values
0
0
DS
DS
= 28 V; I
= 28 V; I
20
40
20
G
Dq
Dq
IMD3
IMD5
IMD7
p
60
= 650 mA; T
= 650 mA; T
D
80
40
100
case
case
120
= 25 C;
= 25 C;
60
140
P
L(AV)
001aac410
001aac412
P
160
L
(W)
(W)
Rev. 01 — 10 January 2006
180
80
70
60
50
40
30
20
10
0
(%)
D
Fig 2. Two-tone CW power gain and drain efficiency
Fig 4. Third order intermodulation distortion as a
IMD3
(dBc)
(dB)
(1) I
(2) I
(3) I
(4) I
G
p
20
18
16
14
12
10
20
40
60
80
0
V
f = 960 MHz
as functions of average load power; typical
values
V
function of average load power; typical values
Dq
Dq
Dq
Dq
0
0
DS
DS
= 550 mA
= 650 mA
= 750 mA
= 850 mA
(1)
= 28 V; I
= 28 V; T
10
(4)
20
20
Dq
G
case
p
30
(2)
= 650 mA; T
BLF4G10LS-120
= 25 C; f = 960 MHz
UHF power LDMOS transistor
D
(3)
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
40
40
50
case
60
= 25 C;
60
70
P
P
L(AV)
001aac411
001aac413
L(AV)
80
(W)
(W)
90
80
60
50
40
30
20
10
0
(%)
4 of 13
D