BLF4G10LS-120,112 NXP Semiconductors, BLF4G10LS-120,112 Datasheet - Page 10

• Manufacturer Part Number: BLF4G10LS-120,112
• Description: BASESTATION FINAL 1GHZ SOT502B
• Manufacturer: NXP Semiconductors

Specifications of BLF4G10LS-120,112

• Package / Case: SOT502B
• Transistor Type: LDMOS
• Frequency: 920MHz
• Gain: 19dB
• Voltage - Rated: 65V
• Current Rating: 12A
• Current - Test: 650mA
• Voltage - Test: 28V
• Power - Output: 48W
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.09 Ohms
• Drain-source Breakdown Voltage: 65 V
• Gate-source Breakdown Voltage: 15 V
• Continuous Drain Current: 12 A
• Maximum Operating Temperature: + 200 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 65 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 568-2404; 934058478112; BLF4G10LS-120; BLF4G10LS-120

Philips Semiconductors
10. Abbreviations
9397 750 14547
Product data sheet
Table 9:
Acronym
CDMA
CW
EDGE
ESR
EVM
GSM
I
LDMOS
PEP
RF
SMD
VSWR
Dq
Abbreviations
Description
Code Division Multiple Access
Continuous Wave
Enhanced Data rates for GSM Evolution
Equivalent Series Resistance
Error Vector Magnitude
Global System for Mobile communications
quiescent drain current
Laterally Diffused Metal Oxide Semiconductor
Peak Envelope Power
Radio Frequency
Surface Mount Device
Voltage Standing Wave Ratio
Rev. 01 — 10 January 2006
BLF4G10LS-120
UHF power LDMOS transistor
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
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