BLF4G10LS-120,112 NXP Semiconductors, BLF4G10LS-120,112 Datasheet - Page 11

• Manufacturer Part Number: BLF4G10LS-120,112
• Description: BASESTATION FINAL 1GHZ SOT502B
• Manufacturer: NXP Semiconductors

Specifications of BLF4G10LS-120,112

• Package / Case: SOT502B
• Transistor Type: LDMOS
• Frequency: 920MHz
• Gain: 19dB
• Voltage - Rated: 65V
• Current Rating: 12A
• Current - Test: 650mA
• Voltage - Test: 28V
• Power - Output: 48W
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.09 Ohms
• Drain-source Breakdown Voltage: 65 V
• Gate-source Breakdown Voltage: 15 V
• Continuous Drain Current: 12 A
• Maximum Operating Temperature: + 200 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 65 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 568-2404; 934058478112; BLF4G10LS-120; BLF4G10LS-120

Philips Semiconductors
11. Revision history
Table 10:
9397 750 14547
Product data sheet
Document ID
BLF4G10LS-120_1
Revision history
Release date
20060110
Data sheet status
Product data sheet
Rev. 01 — 10 January 2006
Change notice
-
Doc. number
9397 750 14547
BLF4G10LS-120
UHF power LDMOS transistor
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Supersedes
-
11 of 13