SLD-1083CZ Sirenza Microdevices Inc, SLD-1083CZ Datasheet - Page 2

IC TRANSISTOR LDMOS 3W 2-SOIC

SLD-1083CZ

Manufacturer Part Number
SLD-1083CZ
Description
IC TRANSISTOR LDMOS 3W 2-SOIC
Manufacturer
Sirenza Microdevices Inc
Datasheet

Specifications of SLD-1083CZ

Transistor Type
LDMOS
Frequency
902MHz ~ 928MHz
Gain
19dB
Voltage - Rated
35V
Current - Test
50mA
Voltage - Test
28V
Power - Output
4W
Package / Case
2-SOIC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current Rating
-
Noise Figure
-
Other names
599-1062-2
SLD-1083CZ
Pin Diagram
Note 1: Gate voltage must be applied to V
destructive oscillations. Bias voltages should never be applied to the transistor unless it is properly terminated on both input
and output.
Note 2: The required V
threshold voltage with LDMOS transistors.
Note 3: The threshold voltage (V
tion may be required.
2 of 6
Absolute Maximum Ratings
Drain Voltage (V
Gate Voltage (V
RF Input Power
Load Impedance for Continuous
Output Device Channel Temperature
Lead Temperature During Solder
Operating Temperature Range
Storage Temperature Range
ESD Rating - Human Body Model
MTTF - 85°C Leadframe, 200°C
Operation of this device beyond any one of these limits may cause permanent dam-
Operation Without Damage
Reflow
Channel
age. For reliable continuous operation, the device voltage and current must not
exceed the maximum operating values specified in the table on page one.
Parameter
GS
DS
)
)
GS
corresponding to a specific I
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support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
GSTH
Pin 1
) of LDMOS transistors varies with device temperature. External temperature compensa-
-40 to +100
-40 to +90
1.2 x 10
Rating
+200
+270
10:1
+30
750
35
20
GS
lead concurrently or after application of drain voltage to prevent potentially
6
DQ
will vary from device to device due to the normal die-to-die variation in
VSWR
Hours
Unit
dBm
°C
°C
°C
°C
V
V
V
Exceeding any one or a combination of the Absolute Maximum Rating conditions may
cause permanent damage to the device. Extended application of Absolute Maximum
Rating conditions to the device may reduce device reliability. Specified typical perfor-
mance or functional operation of the device under Absolute Maximum Rating condi-
tions is not implied.
RoHS status based on EU Directive 2002/95/EC (at time of this document revision).
The information in this publication is believed to be accurate and reliable. However, no
responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any
infringement of patents, or other rights of third parties, resulting from its use. No
license is granted by implication or otherwise under any patent or patent rights of
RFMD. RFMD reserves the right to change component circuitry, recommended appli-
cation circuitry and specifications at any time without prior notice.
Caution! ESD sensitive device.
Pin 2
EDS-104013 Rev H

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