SLD-68EBG1A SILONEX, SLD-68EBG1A Datasheet

SLD-68EBG1A

Manufacturer Part Number

SLD-68EBG1A

Description

Photodiode; 7.5 uA (Min.); 0.40 V (Typ.); 100 nA (Max.); 40 pF (Typ.); -20 degC

Manufacturer

SILONEX

Datasheet

1.SLD-68EBG1A.pdf (1 pages)

Specifications of SLD-68EBG1A

Active Area

2 sq.mm

Angle, Response

40 °

Capacitance, Junction

40 pF

Chip Active Area

2.0 mm^2

Current, Dark

100 nA

Current, Dark, Reverse

100 nA (Max.)

Current, Short Circuit

11 μA

Diameter, Lead

0.50 to 0.52 mm

Length, Lead

25.4 mm

Package Type

TO-46

Primary Type

Photo

Sensitivity Spectral Range

400 nm (Min.)

Spectral Application Range

400 to 700

Temperature, Operating

-20 to +75 °C

Temperature, Operating, Maximum

75 °C

Temperature, Operating, Minimum

-20 °C

Time, Fall

1.5 μs

Time, Rise

1 μs

Voltage, Breakdown

50 V

Voltage, Breakdown, Reverse

50 V (Typ.)

Voltage, Open Circuit

0.4 V

Lead Free Status / Rohs Status

RoHS Compliant part

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Features

Description

This planar, passivated silicon photodiode is designed

to maximize response in the visible light spectrum of

received energy. This diode incorporates a BG filter

that rejects infrared wavelengths and approximates

the response of the human eye. Photodiodes may

operate in either photovoltaic or reverse bias mode to

provide low capacitance with fast switching speed. It

provides excellent linearity in output signal versus

light intensity.

Absolute Maximum Ratings

Storage Temperature

Operating Temperature

Soldering Temperature (3)

Electrical Characteristics

Notes: (1) Ee = light source @ 2854 K

QF-84

Symbol

Planar Photodiode

Integral IR Rejection Filter

Low capacitance

Fast switching time

Low leakage current

Linear response vs irradiance

TO-46 base with epoxy dome lens

Multiple dark current ranges available

1/2

(2) Ee = Light source @

(3) >2 mm from case for <5 sec.

Reverse Dark Current:

Maximum Sensitivity Wavelength

Reverse Breakdown Voltage

Sensitivity Spectral Range

Acceptance Half Angle

Junction Capacitance

Open Circuit Voltage

Short Circuit Current

Temp. Coef., I

Parameter

Rise Time

Fall Time

=25 C unless otherwise noted)

SLD-68EBG1C

SLD-68EBG1D

SLD-68EBG1A

SLD-68EBG1B

SLD-68EBG1E

= 580 nm

-20 C to +75 C

260 C

MIN

400

7.5

TYP

11.0

0.40

+0.2

550

1.0

1.5

100°

50°

90°

60°

70°

80°

Chip Size = 1.7 mm X 1.7 mm

Active Area = 2.0 sq.mm.

1.0

ø 5.3

40°

Specifications subject to change without notice

MAX

0.8

100

250

700

Epoxy

Directional Sensitivity Characteristics

30°

0.6

Integral Infrared Rejection Filter

UNITS

45°

20°

%/ C (1)

0.4

deg

Filter

10°

4.2

Chip

Ee=25mW/cm

(off center-line)

1.0

0.8

0.6

0.4

0.2

0.0

=100 A

SLD-68EBG1

=0V, Ee=25mW/cm

=100mV, Ee=0

=5V, Ee=0

=0, Ee=0, f=1MHz

=10V, R

20°

TEST CONDITIONS

Planar Photodiode

Dimensions in mm. (+/- 0.13)

40°

0.50-0.52

3.0

Half Angle = 40°

25.4 Min.

(Common to case)

=1k

Cathode -

60°

80°

(1)

(2)

Anode +

100°

(1)

120°

2.5

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