SLD-70 BG2A SILONEX, SLD-70 BG2A Datasheet

DIODE, PHOTO, 550NM, 60°

SLD-70 BG2A

Manufacturer Part Number

SLD-70 BG2A

Description

DIODE, PHOTO, 550NM, 60°

Manufacturer

SILONEX

Datasheet

1.SLD-70_BG2A.pdf (1 pages)

Specifications of SLD-70 BG2A

Wavelength Typ

550nm

Half Angle

60Â°

Dark Current

100nA

Diode Case Style

Radial Leaded

No. Of Pins

2

Operating Temperature Range

-20Â°C To +85Â°C

Active Area

9.8mm

Rise Time

4Âµs

Fall Time Tf

6Âµs

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

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Features

Description

The planar photodiode is designed to operate in

either photoconductive or photovoltaic modes. This

diode incorporates a BG filter that rejects infrared

wavelengths and approximates the response of the

human eye. High sensitivity and low dark current

allow use in low irradiance applications. The

photodiode measures 3.6 mm X 3.6 mm (0.140” X

0.140”) and is supplied on a ceramic base with a

clear epoxy dome package.

Absolute Maximum Ratings

Storage Temperature

Operating Temperature

Soldering Temperature (1)

Notes: (1) >2 mm from case for < 5 sec.

Electrical Characteristics

Specifications subject to change without notice.

2 Cogan Ave, Plattsburgh

NY, 12901, USA

Tel: 518-561-3160

Fax: 514-747-3906

Symbol

V

V

TC

I

C

I

t

t

SC

Low capacitance, fast switching time

Linear response vs irradiance

IR blocking filter

Multiple dark current ranges available

1/2

OC

D

R

BR

F

P

R

J

I

(2) Ee = source @ 2854 K

(3) Ee = source @

Reverse Dark Current:

Maximum Sensitivity Wavelength

Reverse Breakdown Voltage

Sensitivity Spectral Range

Acceptance Half Angle

Junction Capacitance

Short Circuit Current

Open Circuit Voltage

Temp. Coef., I

Parameter

Rise Time

Fall Time

(T

= 580 nm

A

=25 C unless otherwise noted)

SLD-70BG2C

SLD-70BG2D

SLD-70BG2A

SLD-70BG2B

SLD-70BG2E

SC

-20 C to +85 C

-20 C to +85 C

CW9 7TN, United Kingdom

Northwich, Cheshire

260 C

Tel: 01606-41999

Fax: 01606-49706

Min

400

40

50

0.40

+0.2

Typ

180

550

55

60

4

6

100°

7.2

50°

60°

70°

80°

90°

Chip Size = 3.6 mm X 3.6 mm

Active Area = 9.8 sq.mm.

1.0

40°

Max

100

100

700

20

0.8

5

1

6.3

Directional Sensitivity Characteristics

30°

Clear Epoxy

0.6

Optical

BG Filter

Units

%/ C (2)

20°

deg

nm

nm

0.4

nA

nA

nA

nA

nA

pF

V

V

A

s

s

10°

Infrared Rejection Filter

V

Ee=25mw/cm

V

V

V

V

V

V

V

V

I

(off center-line)

R

1.0

0.8

0.6

0.4

0.2

0.0

R

R

R

R

R

R

R

R

R

Max.

=100 A

3.4

=0V, Ee=25mW/cm

=100mV, Ee=0

=5V, Ee=0

=5V, Ee=0

=5V, Ee=0

=5V, Ee=0

=0V, Ee=0, f=1MHz

=5V, R

=5V, R

20°

SLD-70BG2

Que, H4M 1T7, Canada

Planar Photodiode

Test Conditions

Dimensions in mm. (+/- 0.2)

2150 Ward, Montreal

40°

Red dot

L

L

38 nom.

Tel: 514-744-5507

Fax: 514-747-3906

=1k

=1k

Half Angle = 60°

1.9

0.50-0.52

60°

2

80°

(2)

(3)

(3)

Cathode

100° 120°

103184 REV 0

Anode

2

(2)

5.1

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