SLD-70IR2A SILONEX, SLD-70IR2A Datasheet

SLD-70IR2A

Manufacturer Part Number

SLD-70IR2A

Description

Photodiode; 400 uA (Min.); 0.40 V (Typ.); 100 nA (Max.); 180 pF (Typ.); -20 deg

Manufacturer

SILONEX

Datasheet

1.SLD-70IR2A.pdf (1 pages)

Specifications of SLD-70IR2A

Active Area

9.8 sq.mm

Angle, Response

60 °

Capacitance, Junction

180 pF

Chip Active Area

9.8 mm^2

Current, Dark

100 nA

Current, Dark, Reverse

100 nA (Max.)

Current, Short Circuit

650 μA

Diameter, Lead

0.5 mm

Length, Lead

38 mm (Nom.)

Package Type

Epoxy Dome

Primary Type

Photo

Sensitivity Spectral Range

700 nm (Min.)

Spectral Application Range

700 to 1100

Temperature, Operating

-20 to +75 °C

Temperature, Operating, Maximum

75 °C

Temperature, Operating, Minimum

-20 °C

Time, Fall

6 μs

Time, Rise

4 μs

Voltage, Breakdown

50 V

Voltage, Breakdown, Reverse

50 V (Typ.)

Voltage, Open Circuit

0.4 V

Lead Free Status / Rohs Status

RoHS Compliant part

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Features

Description

The planar photodiode is designed to maximize

response in the infrared spectrum of received

energy. The photodiode is supplied on a ceramic

base with an IR transmissive epoxy dome package

that rejects visible light wavelengths. Photodiodes

may operate in either photovoltaic or reverse bias

mode to provide low capacitance with fast switching

speed. High sensitivity and low dark current allow

use in even low irradiance applications.

Absolute Maximum Ratings

Storage Temperature

Operating Temperature

Soldering Temperature (3)

Notes: (1) Ee = source @ 2854 K.

Electrical Characteristics

Specifications subject to change without notice.

QF-84

Symbol

Planar Photodiode

Low capacitance

Fast switching time

Low leakage current

Linear response vs irradiance

IR Pass Filter

Multiple dark current ranges available

1/2

(2) Ee = source @

(3) >2 mm from case for < 5 sec.

Reverse Dark Current:

Maximum Sensitivity Wavelength

Reverse Breakdown Voltage

Sensitivity Spectral Range

Acceptance Half Angle

Junction Capacitance

Open Circuit Voltage

Short Circuit Current

Temp. Coef., I

Parameter

Rise Time

Fall Time

= 880 nm

=25 C unless otherwise noted)

SLD-70IR2C

SLD-70IR2D

SLD-70IR2A

SLD-70IR2B

SLD-70IR2E

-20 C to +75 C

260 C

MIN

400

700

TYP

0.40

+0.2

650

180

990

100°

50°

60°

70°

80°

90°

Chip Size = 3.6 mm X 3.6 mm

Active Area = 9.8 sq.mm.

1.0

7.2

40°

MAX

1100

0.8

100

IR Epoxy

Directional Sensitivity Characteristics

30°

0.6

6.3

UNITS

20°

%/ C (1)

0.4

Visible Light Rejection Filter

deg

10°

max.

3.4

Ee=25mw/cm

(off center-line)

1.0

0.8

0.6

0.4

0.2

0.0

=100 A

=0V, Ee=25mW/cm

=100mV, Ee=0

=5V, Ee=0

=0, Ee=0, f=1MHz

=5V, R

20°

TEST CONDITIONS

Planar Photodiode

Red dot

SLD-70IR2

38 nom.

40°

1.9

Dimensions in mm.

=1k

Half Angle = 60°

0.5

60°

80°

(1)

(2)

Cathode

Anode

100° 120°

5.1

(1)

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