SLD-70BG2A SILONEX, SLD-70BG2A Datasheet

SLD-70BG2A

Manufacturer Part Number

SLD-70BG2A

Description

Photo Diode, Planar; Clear Epoxy Dome Package; 55 muA (Typ.); 0.40 V (Typ.)

Manufacturer

SILONEX

Datasheet

1.SLD-70BG2A.pdf (1 pages)

Specifications of SLD-70BG2A

Active Area

9.8 sq.mm

Angle, Response

60 °

Capacitance, Junction

180 pF

Chip Active Area

9.8 sq.mm

Current, Dark

100 nA

Current, Dark, Reverse

100 nA (Max.)

Current, Short Circuit

55 μA

Diameter, Lead

0.50 mm to 0.52 mm

Length, Lead

38 mm (Nom.)

Package Type

Epoxy Dome

Primary Type

Photo

Sensitivity Spectral Range

400 to 700 nm

Spectral Application Range

400 to 700

Temperature Coefficient

+0.2 %⁄°C (Typ.)

Temperature, Operating

-20 to +85 °C

Temperature, Operating, Maximum

85 °C

Temperature, Operating, Minimum

-20 °C

Time, Fall

6 μs

Time, Rise

4 μs

Voltage, Breakdown

50 V

Voltage, Breakdown, Reverse

50 V (Min.)

Voltage, Open Circuit

0.4 V

Lead Free Status / Rohs Status

RoHS Compliant part

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Features

Description

The planar photodiode is designed to operate in

either photoconductive or photovoltaic modes. This

diode incorporates a BG filter that rejects infrared

wavelengths and approximates the response of the

human eye. High sensitivity and low dark current

allow use in low irradiance applications. The

photodiode measures 3.6 mm X 3.6 mm (0.140” X

0.140”) and is supplied on a ceramic base with a

clear epoxy dome package.

Absolute Maximum Ratings

Storage Temperature

Operating Temperature

Soldering Temperature (1)

Notes: (1) >2 mm from case for < 5 sec.

Electrical Characteristics

Specifications subject to change without notice.

QF-84

Symbol

Low capacitance, fast switching time

Linear response vs irradiance

IR blocking filter

Multiple dark current ranges available

1/2

(2) Ee = source @ 2854 K

(3) Ee = source @

Reverse Dark Current:

Maximum Sensitivity Wavelength

Reverse Breakdown Voltage

Sensitivity Spectral Range

Acceptance Half Angle

Junction Capacitance

Open Circuit Voltage

Short Circuit Current

Temp. Coef., I

Parameter

Rise Time

Fall Time

= 580 nm

=25 C unless otherwise noted)

SLD-70BG2C

SLD-70BG2D

SLD-70BG2A

SLD-70BG2B

SLD-70BG2E

-20 C to +85 C

260 C

Min

400

0.40

+0.2

Typ

180

550

100°

7.2

50°

60°

70°

80°

90°

Chip Size = 3.6 mm X 3.6 mm

Active Area = 9.8 sq.mm.

1.0

40°

Max

100

700

0.8

6.3

Directional Sensitivity Characteristics

30°

Clear Epoxy

0.6

Optical

BG Filter

Units

%/ C (2)

20°

deg

0.4

10°

Infrared Rejection Filter

Ee=25mw/cm

(off center-line)

1.0

0.8

0.6

0.4

0.2

0.0

=100 A

Max.

3.4

=0V, Ee=25mW/cm

=100mV, Ee=0

=5V, Ee=0

=0V, Ee=0, f=1MHz

=5V, R

20°

SLD-70BG2

Planar Photodiode

Test Conditions

Dimensions in mm. (+/- 0.2)

40°

Red dot

38 nom.

=1k

Half Angle = 60°

1.9

0.50-0.52

60°

80°

(2)

(3)

Cathode

100° 120°

Anode

(2)

5.1

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