SHF-0289 Sirenza Microdevices Inc, SHF-0289 Datasheet - Page 3

• Manufacturer Part Number: SHF-0289
• Description: IC HFET ALGAAS/GAAS 1W SOT-89
• Manufacturer: Sirenza Microdevices Inc

Specifications of SHF-0289

• Transistor Type: HFET
• Frequency: 1.96GHz
• Gain: 20dB
• Voltage - Rated: 9V
• Current Rating: 400mA
• Noise Figure: 4dB
• Current - Test: 200mA
• Voltage - Test: 7V
• Power - Output: 30.2dBm
• Package / Case: SOT-89
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: 599-1061-2

1. The SHF-0289 is a depletion mode FET and requires a negative gate voltage. Normal pinchoff variation from part-to-part
precludes the use of a fixed gate voltage for all devices. Active bias circuitry or manual gate bias alignment is recommended to
maintain acceptable RF performance (RF and thermal).
2. Active bias circuitry is strongly recommended for class A operation (backoff > 6dB).
3. For large signal operation (<6dB backoff) class AB operation is required to maximize the FET’s performance. Passive gate
bias circuitry is generally required to achieve pure class AB performance. This is generally accomplished using a voltage divider
wit temperature compensation. Per item one above the gate voltage should be aligned for each device to eliminate the effects
of pinchoff process variation.
4. Choose the operating voltage based on the amount of backoff. For large signal operation the drain-source voltage should be
increased to 8V to maximize P1dB. For small signal operation the OIP3 may be improved by reducing the voltage and increas-
ing the current. The recommended application circuit should be re-optimized if the recommended 7V bias condition is not
used. Make sure the quiescent bias condition does not exceed the recommended power dissipation limit.
EDS-101241 Rev F
Note: S-parameters are de-embedded to the device leads with Z
De-embedded s-parameters can be downloaded from our website (www.sirenza.com).
40
35
30
25
20
15
10
5
0
De-embedded S-Parameters (Z
0
Gmax
Isolation
1
Frequency (GHz)
Gain & Isolation
2
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at ([phone] or [e-mail].
Gain
3
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
0
4
Design Considerations and Trade Off
1
5
2
S
DC-IV Curves
=Z
3
6
S
=Z
L
V
=50 Ohms, V
0
-5
-10
-15
-20
-25
-30
-35
-40
L
DS
=50Ω. The data represents typical performace of the device.
4
(V)
5
0.0
0.2
0.2
6
2 GHz
DS
7
3 GHz
0.5
0.5
=7V, I
S11, S22 vs Frequency
0.2
4 GHz
8
1 GHz
3 GHz
4 GHz
2 GHz
5 GHz
0.5
DS
5 GHz
V
1 GHz
6 GHz
GS
=200mA, 25 ° ° ° ° ° C)
S11
SHF-0289(Z)
= -2.0 to 0V, 0.2V steps
1.0
1.0
6 GHz
S22
1.0
50 MHz
T=25 ° ° ° ° ° C
2.0
2.0
2.0
5.0
5.0
5.0
50 MHz
inf
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