SHF-0289 Sirenza Microdevices Inc, SHF-0289 Datasheet - Page 2

• Manufacturer Part Number: SHF-0289
• Description: IC HFET ALGAAS/GAAS 1W SOT-89
• Manufacturer: Sirenza Microdevices Inc

Specifications of SHF-0289

• Transistor Type: HFET
• Frequency: 1.96GHz
• Gain: 20dB
• Voltage - Rated: 9V
• Current Rating: 400mA
• Noise Figure: 4dB
• Current - Test: 200mA
• Voltage - Test: 7V
• Power - Output: 30.2dBm
• Package / Case: SOT-89
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: 599-1061-2

SHF-0289(Z)
Typical Performance with Engineering Application Circuits
MTTF is inversely proportional to the device junction temperature. For junction temperature and MTTF considerations the bias
condition should also satisfy the following expression:
P
Where P
MTTF at T
2 of 6
Absolute Maximum Ratings
Drain Current (I
Forward Gate Current (I
Reverse Gate Current (I
Drain-to-Source Voltage (V
Gate-to-Source Voltage (V
RF Input Power (P
Operating Lead Temperature (T
Storage Temperature Range (T
Power Dissipation (P
Channel Temperature (T
Operation of this device beyond any one of these limits may cause permanent dam-
[1] IS-95 CDMA Channel Power (9 Fwd Channels, 885kHz offset, 30kHz Adj Chan BW)
[2] W-CDMA Channel Power (64 DPCH, 5MHz offset, 3.84MHz Adj Chan BW)
*P
DC
(MHz)
OUT
Freq
1960
2140
<(T
age. For reliable continuous operation, the device voltage and current must not
exceed the maximum operating values specified in the table on page one.
900
=+13dBm per tone, 1MHz tone spacing
J
DC
- T
J
=150°C exceeds 1E7 hours
Parameter
L
=I
) / R
DS
DS
VDS
)
IN
(V)
*V
TH
7
7
7
)
DISS
DS
GSF
GSR
J
)
)
(W), T
GS
DS
)
)
)
)
(mA)
IDQ
STOR
200
200
200
L
J
)
=Junction Temperature (°C), T
)
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(dBm)
P1dB
30.2
30.2
30.3
3.0
2.5
2.0
1.5
1.0
0.5
0.0
-40 to +165
See Graph
See Graph
<-5 or >0
Rating
+165
+9.0
-40
400
400
2.4
2.4
Channel
-45dBc
Power
(dBm)
23.5
23.7
21.7
-10
[1]
[1]
[2]
Operational (Tj<140C)
ABS MAX (Tj<165C)
Power Derating Curve
L
=Lead Temperature (pin 4) (°C), R
20
Lead Temperature (C)
Channel
-55dBc
Power
(dBm)
Unit
21.3
20.4
21.1
mA
mA
mA
mW
°C
°C
°C
W
V
V
[1]
[1]
[2]
50
Exceeding any one or a combination of the Absolute Maximum Rating conditions may
cause permanent damage to the device. Extended application of Absolute Maximum
Rating conditions to the device may reduce device reliability. Specified typical perfor-
mance or functional operation of the device under Absolute Maximum Rating condi-
tions is not implied.
RoHS status based on EUDirective2002/95/EC (at time of this document revision).
The information in this publication is believed to be accurate and reliable. However, no
responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any
infringement of patents, or other rights of third parties, resulting from its use. No
license is granted by implication or otherwise under any patent or patent rights of
RFMD. RFMD reserves the right to change component circuitry, recommended appli-
cation circuitry and specifications at any time without prior notice.
OIP3*
(dBm)
80
43.0
43.0
43.0
Caution! ESD sensitive device.
110 140 170
Gain
(dB)
19.2
14.6
13.8
TH
=Thermal Resistance (°C/W)
S11
(dB)
-15
-18
-18
S22
(dB)
-12
-10
-7
EDS-101241 Rev F
(dB)
NF
3.2
4.0
4.1