SHF-0189 Sirenza Microdevices Inc, SHF-0189 Datasheet

SHF-0189

Manufacturer Part Number

SHF-0189

Description

IC HFET ALGAAS/GAAS .5W SOT-89

Manufacturer

Sirenza Microdevices Inc

Datasheet

1.SHF-0189.pdf (6 pages)

Specifications of SHF-0189

Transistor Type

HFET

Frequency

1.96GHz

Gain

20.1dB

Voltage - Rated

Current Rating

200mA

Noise Figure

3.2dB

Current - Test

100mA

Voltage - Test

Power - Output

27.5dBm

Package / Case

SOT-89

Lead Free Status / RoHS Status

Contains lead / RoHS non-compliant

Other names

599-1060-2

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Download datasheet (391Kb)

Product Description

RFMD’s SHF-0189 is a high performance AIGaAs/GaAs Heterostructure

FET (HFET) housed in a low-cost surface-mount plastic package. The HFET

technology improves breakdown voltage while minimizing Schottky leak-

age current resulting in higher PAE and improved linearity. Output power at

1dB compression for the SHF-0189 is +27dBm when biased for Class AB

operation at 8V, 100mA. The +40dBm third order intercept makes it ideal

for high dynamic range, high intercept point requirements. It is well suited

for use in both analog and digital wireless communication infrastructure

EDS-101240 Rev G

Maximum Available Gain

Insertion Gain

Power Gain

Output Power at 1dB Compression

Output Third Order Intercept Point

Noise Figure

Saturated Drain Current

Transconductance

Pinch-Off Voltage

Gate-Source Breakdown Voltage

Gate-Drain Breakdown Voltage

Thermal Resistance, (Junction - Lead)

Operating Voltage

Operating Current

Power Dissipation

Test Conditions: V

final production test. [2] Sample Tested - Samples pulled from each wafer/package lot. Sample test specifications are based on statistical data from sample test mea-

surements. The test fixture is an engineering application circuit board. The application circuit was designed for the optimum combination of linearity, P

[3] Maximum recommended power dissipation is specified to maintain T

Optimum Technology

Matching® Applied

LDMOS

GaAs HBT

GaAs MESFET

InGaP HBT

SiGe BiCMOS

Si BiCMOS

SiGe HBT

GaAs pHEMT

Si CMOS

Si BJT

GaN HEMT

InP HBT

RF MEMS

[1]

Parameter

[1]

[3]

=8V, I

RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade-

mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc.

and subscriber equipment including 3G, cellular, PCS,

fixed wireless, and pager systems.

=100mA (unless otherwise noted)

[1]

[2]

7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical

support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.

SHF-0189(Z)

0.05Ghz to

6GHz, 0.5Watt

GaAs HFET

-5

Typical Gain Performance (8V,100mA)

Min.

16.6

204

144

-3.0

Specification

Frequency (GHz)

Gmax

Gain

Typ.

23.3

20.1

18.4

14.7

18.6

16.7

27.2

27.5

294

198

-1.9

3.2

-22

-17

[1] 100% Tested - Insertion gain tested using a 50Ω contact board (no matching circuitry) during

<150°C at T

Max.

20.2

384

252

160

-1.0

-15

-17

8.0

0.8

=85°C. V

0.05GHz to 6GHz, 0.5WATT GaAs HFET

°C/W

Unit

dBm

<0.8W is recommended for continuous reliable operation.

0.90GHz, Z

1.96GHz, Z

0.90GHz, Z

1.96GHz, Z

0.90GHz, Application Circuit

1.96GHz, Application Circuit

0.90GHz, Application Circuit

1.96GHz, Application Circuit

0.90GHz and 1.96GHz, Application Circuit

1.96GHz, Application Circuit

drain-source

drain-source, quiescent

=1.2mA, drain open

=1.2mA, V

Features

Applications

=2.0V, I

Available in RFMD Green,

RoHS Compliant, and Pb-Free

(Z Part Number)

High Linearity Performance at

1.96GHz

+27dBm P

+40dBm Output IP

+16.5dB Gain

High Drain Efficiency

Analog and Digital Wireless

Systems

3G, Cellular, PCS

Fixed Wireless, Pager Sys-

tems

DSP

SHF-0189(Z)

, V

=0.6mA

=0V

=-0.25V

=-5.0V

*, Z

=50Ω

Condition

1dB

Package: SOT-89

1dB

and VSWR.

1 of 6

Related parts for SHF-0189

SHF-0189 Summary of contents

Page 1

... Schottky leak- age current resulting in higher PAE and improved linearity. Output power at 1dB compression for the SHF-0189 is +27dBm when biased for Class AB operation at 8V, 100mA. The +40dBm third order intercept makes it ideal for high dynamic range, high intercept point requirements well suited ...

Page 2

... SHF-0189(Z) Absolute Maximum Ratings Parameter Drain Current ( Forward Gate Current (I ) GSF Reverse Gate Current (I ) GSR Drain-to-Source Voltage ( Gate-to-Source Voltage ( Input Power ( Operating Lead Temperature ( Storage Temperature Range (T ) stor Power Dissipation (P ) DISS Channel Temperature ( Moisture Sensitivity Level Operation of this device beyond any one of these limits may cause permanent dam- age ...

Page 3

... S11 2.0 0.5 =Z =50Ω. The data represents typical performace of the device DC-IV Curves 0.3 0.2 0 (V) DS SHF-0189(Z) =100mA, 25 ° ° ° ° ° C) =8V -10 -15 -20 -25 -30 -35 -40 -45 - S22 vs Frequency 1.0 2.0 5.0 8 GHz 6 GHz 4 GHz 0.5 1.0 2 ...

Page 4

... SHF-0189(Z) 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com EDS-101240 Rev G ...

Page 5

... Use 2 ounce copper to improve the PCB’s heat spreading capability. [RECOMMENDED] 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. EDS-101240 Rev G Performance Ground Plane Plated Thru Holes (0.020" DIA) Machine Screws SHF-0189(Z) SHF-0x89 ...

Page 6

... SHF-0189(Z) Refer to drawing posted at www.rfmd.com for tolerances. Alternate marking is SHF0189 or SHF0189Z on line 1 with Trace Code on line 2. Part Number SHF-0189 SHF-0189Z 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com Package Drawing Dimensions in inches (millimeters) .161 ...

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