SHF-0289 Sirenza Microdevices Inc, SHF-0289 Datasheet

IC HFET ALGAAS/GAAS 1W SOT-89

SHF-0289

Manufacturer Part Number
SHF-0289
Description
IC HFET ALGAAS/GAAS 1W SOT-89
Manufacturer
Sirenza Microdevices Inc
Datasheet

Specifications of SHF-0289

Transistor Type
HFET
Frequency
1.96GHz
Gain
20dB
Voltage - Rated
9V
Current Rating
400mA
Noise Figure
4dB
Current - Test
200mA
Voltage - Test
7V
Power - Output
30.2dBm
Package / Case
SOT-89
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
599-1061-2

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SHF-0289
Manufacturer:
SIRENZA
Quantity:
1 000
Part Number:
SHF-0289
Manufacturer:
SIRENZA
Quantity:
912
Part Number:
SHF-0289Z
Manufacturer:
RFMD
Quantity:
2 900
Part Number:
SHF-0289Z
Manufacturer:
QORVO
Quantity:
9 402
Product Description
RFMD’s SHF-0289 is a high performance AIGaAs/GaAs Heterostructure FET (HFET)
housed in a low-cost surface-mount plastic package. The HFET technology improves
breakdown voltage while minimizing Schottky leakage current resulting in higher
PAE and improved linearity. Output power at 1dB compression for the SHF-0289 is
+30dBm when biased for Class AB operation at 7V, 200mA. The +43dBm third
order intercept makes it ideal for high dynamic range, high intercept point require-
ments. It is well suited for use in both analog and digital wireless communication
infrastructure and subscriber equipment including 3G, cellular, PCS, fixed wireless,
EDS-101241 Rev F
Maximum Available Gain
Insertion Gain
Power Gain
Output Power at 1dB Compression
Output Third Order Intercept Point
IS-95 Channel Power (-45dBc ACPR)
Noise Figure
Saturated Drain Current
Transconductance
Pinch-Off Voltage
Gate-Source Breakdown Voltage
Gate-Drain Breakdown Voltage
Thermal Resistance, (Junction - Lead)
Operating Voltage
Operating Current
Power Dissipation
Test Conditions: V
test.
an engineering application circuit board. The application circuit was designed for the optimum combination of linearity, P
tion is specified to maintain T
Optimum Technology
Matching® Applied
GaAs HBT
GaAs MESFET
InGaP HBT
SiGe BiCMOS
Si BiCMOS
SiGe HBT
GaAs pHEMT
Si CMOS
Si BJT
GaN HEMT
RF MEMS
[2] Sample Tested - Samples pulled from each wafer/package lot. Sample test specifications are based on statistical data from sample test measurements. The test fixture is
[2]
[2]
Parameter
[1]
[1]
DS
[3]
[3]
[3]
=7V, I
RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade-
mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc.
DQ
and pager systems.
=200mA (unless otherwise noted)
J
<140°C at T
[1]
[1]
[2]
[2]
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
40
35
30
25
20
15
10
SHF-0289(Z)
0.05GHz to
6GHz, 1.0Watt
GaAs HFET
L
5
0
=85°C. V
0
Typical Gain Performance (7V,200mA)
Min.
16.7
13.1
28.7
40.5
408
288
-3.0
DS
*I
1
DQ
<1.4W is recommended for continuous reliable operation.
Specification
Frequency (GHz)
[1] 100% Tested - Insertion gain tested using a 50Ω contact board (no matching circuitry) during final production
2
Gain
Typ.
19.5
18.5
14.6
30.2
43.0
23.7
588
396
-1.9
4.0
-17
-22
23
20
41
3
Gmax
4
Max.
RFMD Green, RoHS Compliant, Pb-Free (Z Part Number)
20.3
16.1
768
504
-1.0
280
-15
-17
8.0
1.4
5
0.05GHz to 6GHz, 1.0WATT GaAs HFET
6
Unit
°C/W
dBm
dBm
dBm
dBm
mA
mS
mA
dB
dB
dB
dB
dB
W
V
V
V
V
1dB
0.90GHz, Z
1.96GHz, Z
2.14GHz, Z
0.90GHz, Z
1.96GHz, Application Circuit
1.96GHz, Application Circuit
1.96GHz, Application Circuit
1.96GHz, Application Circuit
1.96GHz, Application Circuit
V
V
V
I
I
drain-source
drain-source, quiescent
GS
GD
DS
DS
DS
and VSWR.
=2.4mA, drain open
=2.4mA, V
=V
=V
=2.0V, I
Features
Applications
DSP
DSP
High Linearity Performance at
1.96GHz
+30dBm P
+43dBm OIP
+23.7dBm IS-95 Channel
Power
+14.6dB Gain
+21.7dBm W-CDMA Channel
Power
High Drain Efficiency (>50%
at P
Analog and Digital Wireless
Systems
3G, Cellular, PCS
Fixed Wireless, Pager Sys-
tems
, V
, V
SHF-0289(Z)
S
S
S
S
DS
GS
GS
=Z
=Z
=Z
=Z
GS
1dB
=1.2mA
=0V
=-0.25V
S
S
S
L
*, Z
[3] Maximum recommended power dissipa-
*, Z
*, Z
=50Ω
=-5.0V
L
)
L
L
=Z
=Z
=Z
Condition
L
L
L
*
*
*
1dB
3
Package: SOT-89
1 of 6

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SHF-0289 Summary of contents

Page 1

... The HFET technology improves breakdown voltage while minimizing Schottky leakage current resulting in higher PAE and improved linearity. Output power at 1dB compression for the SHF-0289 is +30dBm when biased for Class AB operation at 7V, 200mA. The +43dBm third order intercept makes it ideal for high dynamic range, high intercept point require- ments ...

Page 2

... SHF-0289(Z) Absolute Maximum Ratings Parameter Drain Current ( Forward Gate Current (I ) GSF Reverse Gate Current (I ) GSR Drain-to-Source Voltage ( Gate-to-Source Voltage ( Input Power ( Operating Lead Temperature ( Storage Temperature Range (T ) STOR Power Dissipation (P ) DISS Channel Temperature ( Operation of this device beyond any one of these limits may cause permanent dam- age ...

Page 3

... The SHF-0289 is a depletion mode FET and requires a negative gate voltage. Normal pinchoff variation from part-to-part precludes the use of a fixed gate voltage for all devices. Active bias circuitry or manual gate bias alignment is recommended to maintain acceptable RF performance (RF and thermal). 2. Active bias circuitry is strongly recommended for class A operation (backoff > 6dB). ...

Page 4

... SHF-0289(Z) Pin Function Description 1 Gate RF input. 2 Source Connection to ground. Use via holes to reduce lead inductance. Place vias as close to ground leads as possible. 3 Drain RF output. 4 Source Same as pin 2. Mounting and Thermal Considerations It is very important that adequate heat sinking be provided to minimize the device junction temperature. The following items should be implemented to maximize MTTF and RF performance ...

Page 5

... Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. EDS-101241 Rev F Package Drawing Dimensions in inches (millimeters) .161 .016 .177 .068 .019 .096 .041 .015 .059 Part Symbolization Ordering Information Reel Size Devices/Reel 7” 1000 7” 1000 SHF-0289(Z) .118 ...

Page 6

... SHF-0289(Z) 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com EDS-101241 Rev F ...

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