BG 3123R H6327 Infineon Technologies, BG 3123R H6327 Datasheet - Page 8

• Manufacturer Part Number: BG 3123R H6327
• Description: MOSFET N-CH DUAL 8V 25MA SOT363
• Manufacturer: Infineon Technologies

Specifications of BG 3123R H6327

• Transistor Type: 2 N-Channel (Dual)
• Frequency: 800MHz
• Gain: 25dB
• Voltage - Rated: 8V
• Current Rating: 25mA, 20mA
• Noise Figure: 1.8dB
• Current - Test: 14mA
• Voltage - Test: 5V
• Package / Case: SC-70-6, SC-88, SOT-363
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Power - Output: -
• Lead Free Status / Rohs Status: Details

Drain current I
V
(connected to V GG , V GG =gate1 supply voltage)
Drain current I
V
amp. A
DS
G2S
mA
mA
= 5V, V
18
14
12
10
18
14
12
10
= 4V, R
8
6
4
2
0
8
6
4
2
0
0
0
1
1
G2S
G1
D
D
= 4V, R
2
= Parameter in k
2
=
= (V
(V
3
3
GG
GG
G1
)
) amp. A
4
4
= 60k
5
5
50
60
80
100
V
V
V
V
GG
GG
= V
7
7
DS
8
Drain current I
V
(connected to V GG , V GG =gate1 supply voltage)
Drain current I
V
amp. B
DS
G2S
mA
mA
= 5V, V
18
14
12
10
18
14
12
10
= 4V, R
8
6
4
2
0
8
6
4
2
0
0
0
1
1
G2S
G1
D
D
= 4V, R
2
= Parameter in k
2
=
= (V
(V
3
3
GG
GG
G1
)
) amp. B
4
4
= 50k
5
5
BG3123...
2007-04-26
70
40
50
60
V
V
V
V
GG
GG
= V
7
7
DS