BG 3123R H6327 Infineon Technologies, BG 3123R H6327 Datasheet - Page 4

• Manufacturer Part Number: BG 3123R H6327
• Description: MOSFET N-CH DUAL 8V 25MA SOT363
• Manufacturer: Infineon Technologies

Specifications of BG 3123R H6327

• Transistor Type: 2 N-Channel (Dual)
• Frequency: 800MHz
• Gain: 25dB
• Voltage - Rated: 8V
• Current Rating: 25mA, 20mA
• Noise Figure: 1.8dB
• Current - Test: 14mA
• Voltage - Test: 5V
• Package / Case: SC-70-6, SC-88, SOT-363
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Power - Output: -
• Lead Free Status / Rohs Status: Details

Electrical Characteristics at T
Parameter
AC Characteristics V
Forward transconductance
amp. A
amp. B
Gate1 input capacitance
f = 10 MHz, amp. A
f = 10 MHz, amp. B
Output capacitance
f = 10 MHz, amp. A
f = 10 MHz, amp. B
Power gain
f = 800 MHz, amp. A
f = 800 MHz, amp. B
f = 45 MHz, amp. A
f = 45 MHz, amp. B
Noise figure
f = 800 MHz, amp. A
f = 800 MHz, amp. B
f = 45 MHz, amp. A
f = 45 MHz, amp. B
Gain control range
V
Cross-modulation k=1%, f
amp.A , AGC = 0 dB
amp. B, AGC = 0 dB
amp. A , AGC = 10 dB
amp. B , AGC = 10 dB
amp. A, AGC = 40 dB
amp. B, AGC = 40 dB
G2S
= 4 ... 0 V , f = 800 MHz
DS
= 5V, V
w
=50MHz, f
A
G2S
= 25°C, unless otherwise specified
= 4V, (I
unw
=60MHz
D
= 14 mA) (verified by random sampling)
4
Symbol
g
C
C
G
F
X
fs
G
mod
g1ss
dss
p
p
min.
45
90
90
98
98
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Values
103
104
typ.
1.9
1.5
1.3
1.1
1.8
1.8
1.4
1.6
30
25
25
24
32
30
96
97
91
94
-
max.
BG3123...
2007-04-26
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Unit
mS
pF
dB
dB
-