BG 3123R H6327 Infineon Technologies, BG 3123R H6327 Datasheet - Page 5

• Manufacturer Part Number: BG 3123R H6327
• Description: MOSFET N-CH DUAL 8V 25MA SOT363
• Manufacturer: Infineon Technologies

Specifications of BG 3123R H6327

• Transistor Type: 2 N-Channel (Dual)
• Frequency: 800MHz
• Gain: 25dB
• Voltage - Rated: 8V
• Current Rating: 25mA, 20mA
• Noise Figure: 1.8dB
• Current - Test: 14mA
• Voltage - Test: 5V
• Package / Case: SC-70-6, SC-88, SOT-363
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Power - Output: -
• Lead Free Status / Rohs Status: Details

Total power dissipation P
amp. A
Drain current I
V
amp. A
G2S
mW
mA
300
200
150
100
50
16
12
10
= 4V
0
8
6
4
2
0
0
0
20
10
D
40
20
= (I
60
30
G1
)
80
40
tot
100
= (T
50
120 °C
µA
S
)
T
I
G1
S
150
70
5
Total power dissipation P
amp. B
Drain current I
V
amp. B
G2S
mW
mA
300
200
150
100
50
16
12
10
= 4V
0
8
6
4
2
0
0
0
20
10
D
40
20
= (I
60
30
G1
)
80
40
tot
100
= (T
50
BG3123...
2007-04-26
120 °C
S
µA
)
T
I
G1
S
150
70