PD85006L-E STMicroelectronics, PD85006L-E Datasheet - Page 9

• Manufacturer Part Number: PD85006L-E
• Description: TRANS RF POWER LDMOST
• Manufacturer: STMicroelectronics

Specifications of PD85006L-E

• Transistor Type: LDMOS
• Frequency: 870MHz
• Gain: 17dB
• Voltage - Rated: 40V
• Current Rating: 2A
• Current - Test: 200mA
• Voltage - Test: 13.6V
• Power - Output: 5W
• Package / Case: PowerFLAT™ (5 x 5)
• Configuration: Quad Common Source
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 40 V
• Gate-source Breakdown Voltage: - 0.5 V, + 15 V
• Continuous Drain Current: 2 A
• Power Dissipation: 20.8 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 65 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / Rohs Status: Details
• Other names: 497-8292; 497-8292-2; 497-8292

PD85006L-E
6
Schematic and bill of material
Figure 13. Schematic and bill of material
RFin
FR 4
H =20 mil
M Sub
C6
C7
T L1
D 1
C 8
C9
T L2
R2
R3
R 1
C 10
T L3
C 1
B1
LDM OS
PD85 006L
T L4
L1
Schematic and bill of material
C11
B2
T L5
C2
C12
C 3
T L6
C4
C 13
+
C 5
V cc
C14
1 +
2 -
RF out
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