PD85006L-E STMicroelectronics, PD85006L-E Datasheet - Page 15

TRANS RF POWER LDMOST

PD85006L-E

Manufacturer Part Number
PD85006L-E
Description
TRANS RF POWER LDMOST
Manufacturer
STMicroelectronics
Datasheet

Specifications of PD85006L-E

Transistor Type
LDMOS
Frequency
870MHz
Gain
17dB
Voltage - Rated
40V
Current Rating
2A
Current - Test
200mA
Voltage - Test
13.6V
Power - Output
5W
Package / Case
PowerFLAT™ (5 x 5)
Configuration
Quad Common Source
Transistor Polarity
N-Channel
Drain-source Breakdown Voltage
40 V
Gate-source Breakdown Voltage
- 0.5 V, + 15 V
Continuous Drain Current
2 A
Power Dissipation
20.8 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 65 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Noise Figure
-
Lead Free Status / Rohs Status
 Details
Other names
497-8292
497-8292-2
497-8292

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
PD85006L-E
Manufacturer:
DIODES
Quantity:
4 000
Part Number:
PD85006L-E
Manufacturer:
ST
Quantity:
20 000
PD85006L-E
Package mechanical data
Figure 17. PowerFLAT™ (5x5) recommended footprint
15/17

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