PD85006L-E STMicroelectronics, PD85006L-E Datasheet - Page 5

• Manufacturer Part Number: PD85006L-E
• Description: TRANS RF POWER LDMOST
• Manufacturer: STMicroelectronics

Specifications of PD85006L-E

• Transistor Type: LDMOS
• Frequency: 870MHz
• Gain: 17dB
• Voltage - Rated: 40V
• Current Rating: 2A
• Current - Test: 200mA
• Voltage - Test: 13.6V
• Power - Output: 5W
• Package / Case: PowerFLAT™ (5 x 5)
• Configuration: Quad Common Source
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 40 V
• Gate-source Breakdown Voltage: - 0.5 V, + 15 V
• Continuous Drain Current: 2 A
• Power Dissipation: 20.8 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 65 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / Rohs Status: Details
• Other names: 497-8292; 497-8292-2; 497-8292

PD85006L-E
3
Impedances
Figure 2.
Table 8.
F(MHz)
860
880
900
920
940
960
Impedances
Broadband impedances
2.66+ j 4.28
2.81+ j 4.35
2.88+ j 4.34
2.87+ j 4.25
2.68+ j 4.20
2.39+ j 4.20
Z
GS
6.73 + j 6.66
6.23+ j 5.71
6.46+ j 6.20
7.06+ j 7.06
7.40+ j 7.45
7.80+ j 7.75
Z
DL
Impedances
5/17