PD85006L-E STMicroelectronics, PD85006L-E Datasheet - Page 13

• Manufacturer Part Number: PD85006L-E
• Description: TRANS RF POWER LDMOST
• Manufacturer: STMicroelectronics

Specifications of PD85006L-E

• Transistor Type: LDMOS
• Frequency: 870MHz
• Gain: 17dB
• Voltage - Rated: 40V
• Current Rating: 2A
• Current - Test: 200mA
• Voltage - Test: 13.6V
• Power - Output: 5W
• Package / Case: PowerFLAT™ (5 x 5)
• Configuration: Quad Common Source
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 40 V
• Gate-source Breakdown Voltage: - 0.5 V, + 15 V
• Continuous Drain Current: 2 A
• Power Dissipation: 20.8 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 65 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / Rohs Status: Details
• Other names: 497-8292; 497-8292-2; 497-8292

PD85006L-E
Table 10.
Figure 15. PowerFLAT™ (5x5) package dimensions
Dim.
AA
A1
A3
E2
A
D
E
b
d
e
g
h
c
f
PowerFLAT™ (5x5) mechanical data
0.15
0.43
0.64
2.49
Min
0.90
0.02
0.24
0.25
0.51
0.71
5.00
0.30
5.00
2.57
1.27
3.37
0.74
0.21
Typ
mm
Max
1.00
0.05
0.35
0.58
0.79
2.64
0.006
0.017
0.025
0.098
Min
Package mechanical data
0.035
0.001
0.009
0.020
0.028
0.197
0.011
0.197
0.101
0.050
0.132
0.008
0.01
0.03
Typ
inch
0.039
0.002
0.014
0.023
0.031
0.104
Max
13/17