BLS6G3135-20,112 NXP Semiconductors, BLS6G3135-20,112 Datasheet - Page 9

• Manufacturer Part Number: BLS6G3135-20,112
• Description: TRANS LDMOS 3.5GHZ SOT608A
• Manufacturer: NXP Semiconductors

Specifications of BLS6G3135-20,112

• Package / Case: SOT-608A
• Transistor Type: LDMOS
• Frequency: 3.1GHz ~ 3.5GHz
• Gain: 15.5dB
• Voltage - Rated: 60V
• Current Rating: 2.1A
• Current - Test: 50mA
• Voltage - Test: 32V
• Power - Output: 20W
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.58 Ohms
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: - 0.5 V to + 13 V
• Continuous Drain Current: 2.1 A
• Maximum Operating Temperature: + 225 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 65 C
• Application: S-Band
• Channel Type: N
• Channel Mode: Enhancement
• Drain Source Voltage (max): 60V
• Output Power (max): 20W(Typ)
• Power Gain (typ)@vds: 15.5@32VdB
• Frequency (min): 3.1GHz
• Frequency (max): 3.5GHz
• Package Type: CDFM
• Pin Count: 3
• Forward Transconductance (typ): 2.8S
• Drain Source Resistance (max): 580mohm
• Operating Temp Range: -65C to 225C
• Drain Efficiency (typ): 45%
• Mounting: Screw
• Mode Of Operation: Pulsed RF
• Number Of Elements: 1
• Vswr (max): 5
• Screening Level: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / Rohs Status: Compliant
• Other names: 934060062112; BLS6G3135-20; BLS6G3135-20

NXP Semiconductors
Fig 12. Package outline SOT608B
BLS6G3135-20_6G3135S-20_3
Product data sheet
Ceramic earless flanged package; 2 leads
DIMENSIONS (mm dimensions are derived from the original inch dimensions)
UNIT
inch
mm
VERSION
OUTLINE
SOT608B
0.182
0.148
4.62
3.76
A
0.285
0.275
7.24
6.99
b
0.006
0.004
0.15
0.10
c
IEC
H
A
10.21
10.01
0.402
0.394
D
10.29
10.03
0.405
0.395
D
1
10.21
10.01
0.402
0.394
JEDEC
E
U
D
b
1
D
1
10.29
10.03
0.405
0.395
REFERENCES
E
BLS6G3135-20; BLS6G3135S-20
1
3
1
2
Rev. 03 — 3 March 2009
0.045
0.035
1.14
0.89
F
0
w
15.75
14.73
0.620
0.580
1
JEITA
F
M
H
A
scale
A
0.067
0.053
M
1.70
1.35
Q
5 mm
10.24
0.403
0.393
9.98
U
1
U
10.24
0.403
0.393
2
9.98
U
2
E
LDMOS S-Band radar power transistor
1
0.020
0.51
w
1
Q
PROJECTION
EUROPEAN
c
E
© NXP B.V. 2009. All rights reserved.
ISSUE DATE
06-11-27
06-12-06
SOT608B
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