BLS6G3135-20,112 NXP Semiconductors, BLS6G3135-20,112 Datasheet - Page 10

• Manufacturer Part Number: BLS6G3135-20,112
• Description: TRANS LDMOS 3.5GHZ SOT608A
• Manufacturer: NXP Semiconductors

Specifications of BLS6G3135-20,112

• Package / Case: SOT-608A
• Transistor Type: LDMOS
• Frequency: 3.1GHz ~ 3.5GHz
• Gain: 15.5dB
• Voltage - Rated: 60V
• Current Rating: 2.1A
• Current - Test: 50mA
• Voltage - Test: 32V
• Power - Output: 20W
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.58 Ohms
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: - 0.5 V to + 13 V
• Continuous Drain Current: 2.1 A
• Maximum Operating Temperature: + 225 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 65 C
• Application: S-Band
• Channel Type: N
• Channel Mode: Enhancement
• Drain Source Voltage (max): 60V
• Output Power (max): 20W(Typ)
• Power Gain (typ)@vds: 15.5@32VdB
• Frequency (min): 3.1GHz
• Frequency (max): 3.5GHz
• Package Type: CDFM
• Pin Count: 3
• Forward Transconductance (typ): 2.8S
• Drain Source Resistance (max): 580mohm
• Operating Temp Range: -65C to 225C
• Drain Efficiency (typ): 45%
• Mounting: Screw
• Mode Of Operation: Pulsed RF
• Number Of Elements: 1
• Vswr (max): 5
• Screening Level: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / Rohs Status: Compliant
• Other names: 934060062112; BLS6G3135-20; BLS6G3135-20

NXP Semiconductors
10. Abbreviations
11. Revision history
Table 11.
BLS6G3135-20_6G3135S-20_3
Product data sheet
Document ID
BLS6G3135-20_6G3135S-20_3 20090303
Modifications:
BLS6G3135-20_6G3135S-20_2 20081217
BLS6G3135-20_6G3135S-20_1 20070307
Revision history
Table 10.
Acronym
LDMOS
RF
S-Band
VSWR
Release date Data sheet status
•
Abbreviations
Section 7.1 on page
BLS6G3135-20; BLS6G3135S-20
Product data sheet
Product data sheet
Objective data sheet -
Rev. 03 — 3 March 2009
Description
Laterally Diffused Metal Oxide Semiconductor
Radio Frequency
Short wave Band
Voltage Standing-Wave Ratio
4: Impedance information added
Change notice Supersedes
-
-
LDMOS S-Band radar power transistor
BLS6G3135-20_6G3135S-20_2
BLS6G3135-20_6G3135S-20_1
-
© NXP B.V. 2009. All rights reserved.
10 of 12