BLS6G3135-20,112 NXP Semiconductors, BLS6G3135-20,112 Datasheet - Page 7

• Manufacturer Part Number: BLS6G3135-20,112
• Description: TRANS LDMOS 3.5GHZ SOT608A
• Manufacturer: NXP Semiconductors

Specifications of BLS6G3135-20,112

• Package / Case: SOT-608A
• Transistor Type: LDMOS
• Frequency: 3.1GHz ~ 3.5GHz
• Gain: 15.5dB
• Voltage - Rated: 60V
• Current Rating: 2.1A
• Current - Test: 50mA
• Voltage - Test: 32V
• Power - Output: 20W
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.58 Ohms
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: - 0.5 V to + 13 V
• Continuous Drain Current: 2.1 A
• Maximum Operating Temperature: + 225 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 65 C
• Application: S-Band
• Channel Type: N
• Channel Mode: Enhancement
• Drain Source Voltage (max): 60V
• Output Power (max): 20W(Typ)
• Power Gain (typ)@vds: 15.5@32VdB
• Frequency (min): 3.1GHz
• Frequency (max): 3.5GHz
• Package Type: CDFM
• Pin Count: 3
• Forward Transconductance (typ): 2.8S
• Drain Source Resistance (max): 580mohm
• Operating Temp Range: -65C to 225C
• Drain Efficiency (typ): 45%
• Mounting: Screw
• Mode Of Operation: Pulsed RF
• Number Of Elements: 1
• Vswr (max): 5
• Screening Level: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / Rohs Status: Compliant
• Other names: 934060062112; BLS6G3135-20; BLS6G3135-20

NXP Semiconductors
8. Test information
Table 9.
See
[1]
[2]
BLS6G3135-20_6G3135S-20_3
Product data sheet
Component
C1, C2, C5, C6, C7, C8, C9
C3, C4, C10, C11
C12
C13
L1
R1
Fig 10. Component layout for 3.1 GHz to 3.5 GHz test circuit
American Technical Ceramics type 100A or capacitor of same quality.
American Technical Ceramics type 100B or capacitor of same quality.
Figure
C13
V
GG
Striplines are on a double copper-clad Rogers Duroid 6006 Printed-Circuit Board (PCB) with
See
10.
List of components
C3
Table 9
C4
C5
for list of components.
R1
C1
C6
Description
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
electrolytic capacitor
electrolytic capacitor
copper wire
resistor
BLS6G3135-20; BLS6G3135S-20
Rev. 03 — 3 March 2009
/ 4-line
C7
C9
C8
LDMOS S-Band radar power transistor
C10
Value
33 pF
470 pF
47 F; 63 V
10 F; 35 V
-
49.9
C2
C11
/ 4-line
L1
r
= 6.2 and thickness = 0.64 mm.
V
DD
© NXP B.V. 2009. All rights reserved.
[1]
[2]
C12
Remarks
001aah590
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