BLS6G3135-20,112 NXP Semiconductors, BLS6G3135-20,112 Datasheet - Page 4

• Manufacturer Part Number: BLS6G3135-20,112
• Description: TRANS LDMOS 3.5GHZ SOT608A
• Manufacturer: NXP Semiconductors

Specifications of BLS6G3135-20,112

• Package / Case: SOT-608A
• Transistor Type: LDMOS
• Frequency: 3.1GHz ~ 3.5GHz
• Gain: 15.5dB
• Voltage - Rated: 60V
• Current Rating: 2.1A
• Current - Test: 50mA
• Voltage - Test: 32V
• Power - Output: 20W
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.58 Ohms
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: - 0.5 V to + 13 V
• Continuous Drain Current: 2.1 A
• Maximum Operating Temperature: + 225 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 65 C
• Application: S-Band
• Channel Type: N
• Channel Mode: Enhancement
• Drain Source Voltage (max): 60V
• Output Power (max): 20W(Typ)
• Power Gain (typ)@vds: 15.5@32VdB
• Frequency (min): 3.1GHz
• Frequency (max): 3.5GHz
• Package Type: CDFM
• Pin Count: 3
• Forward Transconductance (typ): 2.8S
• Drain Source Resistance (max): 580mohm
• Operating Temp Range: -65C to 225C
• Drain Efficiency (typ): 45%
• Mounting: Screw
• Mode Of Operation: Pulsed RF
• Number Of Elements: 1
• Vswr (max): 5
• Screening Level: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / Rohs Status: Compliant
• Other names: 934060062112; BLS6G3135-20; BLS6G3135-20

NXP Semiconductors
BLS6G3135-20_6G3135S-20_3
Product data sheet
7.1 Impedance information
7.2 Ruggedness in class-AB operation
Table 8.
[1]
The BLS6G3135-20 and BLS6G3135S-20 are capable of withstanding a load mismatch
corresponding to VSWR = 5 : 1 through all phases under the following conditions:
V
f
GHz
3.1
3.2
3.3
3.4
3.5
Fig 1.
DS
Measured with Z
= 32 V; I
Z
31.24
50.56
43.66 + j17.27
24.13 + j28.47
10.56 + j22.21
S
Definition of transistor impedance
Typical impedance
Dq
j31.07
j12.48
= 50 mA; P
L
optimized for G
BLS6G3135-20; BLS6G3135S-20
Rev. 03 — 3 March 2009
Z
6.99 + j12.9
5.82 + j8.77
2.32 + j6.17
5.52 + j6.10
5.79 + j3.19
L
L
(optimized for
= 20 W; t
p
.
gate
p
Z
S
= 300 s;
D
)
001aaf059
LDMOS S-Band radar power transistor
Z
13.01 + j14.75
11.47 + j11.17
10.05 + j10.55
9.93 + j8.48
9.37 + j5.73
Z
drain
L
L
= 10 %.
(optimized for G
p
)
© NXP B.V. 2009. All rights reserved.
G
dB
18.08
17.97
17.75
17.91
17.68
p(opt)
%
48.34
45.60
47.01
47.03
46.54
D
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