BLF573S,112 NXP Semiconductors, BLF573S,112 Datasheet - Page 9

• Manufacturer Part Number: BLF573S,112
• Description: TRANSISTOR RF LDMOS SOT502B
• Manufacturer: NXP Semiconductors

Specifications of BLF573S,112

• Transistor Type: LDMOS
• Frequency: 225MHz
• Gain: 27.2dB
• Voltage - Rated: 110V
• Current Rating: 42A
• Current - Test: 900mA
• Voltage - Test: 50V
• Power - Output: 300W
• Package / Case: SOT502B
• Application: HF/VHF
• Channel Type: N
• Channel Mode: Enhancement
• Continuous Drain Current: 42A
• Drain Source Voltage (max): 110V
• Output Power (max): 300W
• Power Gain (typ)@vds: 27.2@50VdB
• Frequency (max): 225MHz
• Package Type: LDMOST
• Pin Count: 3
• Forward Transconductance (typ): 20S
• Drain Source Resistance (max): 90(Typ)@6Vmohm
• Input Capacitance (typ)@vds: 300@50VpF
• Output Capacitance (typ)@vds: 103@50VpF
• Reverse Capacitance (typ): 2.3@50VpF
• Operating Temp Range: -65C to 225C
• Drain Efficiency (typ): 70%
• Mounting: Surface Mount
• Mode Of Operation: CW
• Number Of Elements: 1
• Vswr (max): 13
• Screening Level: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / Rohs Status: Compliant
• Other names: 934062175112

NXP Semiconductors
Table 9.
For production test circuit, see
Printed-Circuit Board (PCB): Rogers 5880;
thickness copper plating = 35 m.
[1]
BLF573S_2
Product data sheet
Component
C15
C16
C17
C19
L1
L2
L3
L4, L5
L6
L7
L8
R1
Fig 9.
American Technical Ceramics type 100B or capacitor of same quality.
input
50
Class-AB common-source production test circuit
List of components
C1
Description
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
electrolytic capacitor
2 turns enamelled copper wire
4 turns enamelled copper wire
stripline
stripline
stripline
stripline
stripline
metal film resistor
C2
L3
Figure 9
…continued
and
C3
C4
Figure
r
= 2.2 F/m; height = 0.79 mm; Cu (top/bottom metallization);
C5
Rev. 02 — 17 February 2009
C7
10.
C9
C8
Value
33 pF
36 pF
16 pF
220 F; 63 V
D = 3 mm;
d = 1 mm;
length = 2 mm;
leads = 2
D = 2 mm;
d = 1 mm;
length = 13 mm;
leads = 2
-
-
-
-
-
100 ; 0.6 W
C6
V
L4
GG
R1
V
L5
DD
6 mm
5 mm
L1
B1
C19
C20
C10
L6
C13
[1]
[1]
[1]
C11
Remarks
(L
(L
(L
(L
(L
C14
W) 96 mm
W) 15 mm
W) 105 mm
W) 3 mm
W) 12 mm
C12
HF / VHF power LDMOS transistor
C15
6 mm
L2
3 mm
8 mm
6 mm
C16
6 mm
L7
L8
C17
BLF573S
© NXP B.V. 2009. All rights reserved.
C18
001aaj148
output
50
9 of 14