BLF573S,112 NXP Semiconductors, BLF573S,112 Datasheet - Page 8

• Manufacturer Part Number: BLF573S,112
• Description: TRANSISTOR RF LDMOS SOT502B
• Manufacturer: NXP Semiconductors

Specifications of BLF573S,112

• Transistor Type: LDMOS
• Frequency: 225MHz
• Gain: 27.2dB
• Voltage - Rated: 110V
• Current Rating: 42A
• Current - Test: 900mA
• Voltage - Test: 50V
• Power - Output: 300W
• Package / Case: SOT502B
• Application: HF/VHF
• Channel Type: N
• Channel Mode: Enhancement
• Continuous Drain Current: 42A
• Drain Source Voltage (max): 110V
• Output Power (max): 300W
• Power Gain (typ)@vds: 27.2@50VdB
• Frequency (max): 225MHz
• Package Type: LDMOST
• Pin Count: 3
• Forward Transconductance (typ): 20S
• Drain Source Resistance (max): 90(Typ)@6Vmohm
• Input Capacitance (typ)@vds: 300@50VpF
• Output Capacitance (typ)@vds: 103@50VpF
• Reverse Capacitance (typ): 2.3@50VpF
• Operating Temp Range: -65C to 225C
• Drain Efficiency (typ): 70%
• Mounting: Surface Mount
• Mode Of Operation: CW
• Number Of Elements: 1
• Vswr (max): 13
• Screening Level: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / Rohs Status: Compliant
• Other names: 934062175112

NXP Semiconductors
Table 9.
For production test circuit, see
Printed-Circuit Board (PCB): Rogers 5880;
thickness copper plating = 35 m.
BLF573S_2
Product data sheet
Component
B1
C1, C18
C2
C3, C4
C5, C6, C7
C8, C20
C9
C10
C11, C12, C13 multilayer ceramic chip capacitor
C14
Fig 7.
(dB)
G
p
30
28
26
24
22
0
V
f
Power gain and drain efficiency as functions of
peak envelope load power; typical values
2
DS
List of components
= 225.05 MHz.
= 50 V; I
8.1.2 2-Tone CW
100
Description
ferrite SMD bead
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
8.2 Test circuit
G
D
p
Dq
= 900 mA; f
200
Figure 9
300
1
= 224.95 MHz;
and
400
P
L(PEP)
001aaj615
Figure
r
= 2.2 F/m; height = 0.79 mm; Cu (top/bottom metallization);
Rev. 02 — 17 February 2009
(W)
500
10.
80
60
40
20
0
Value
100 ; 100 MHz
100 pF
39 pF
180 pF
220 pF
1 nF
4.7 F
30 pF
51 pF
43 pF
(%)
D
Fig 8.
IMD3
(dBc)
(1) I
(2) I
(3) I
(4) I
(5) I
(6) I
(7) I
(8) I
20
40
60
80
0
0
V
Third order intermodulation distortion as a
function of peak envelope load power; typical
values
[1]
[1]
[1]
[1]
[1]
[1]
[1]
[1]
Dq
Dq
Dq
Dq
Dq
Dq
Dq
Dq
DS
= 500 mA
= 700 mA
= 900 mA
= 1100 mA
= 1300 mA
= 1500 mA
= 1700 mA
= 1800 mA
Remarks
Ferroxcube BDS3/3/8.9-4S2 or equivalent
TDK C4532X7R1E475MT020U or equivalent
= 50 V; f
(8)
(7)
(6)
100
HF / VHF power LDMOS transistor
1
= 224.95 MHz; f
200
(1)
(2)
(3)
(4)
(5)
300
2
= 225.05 MHz.
BLF573S
© NXP B.V. 2009. All rights reserved.
400
P
L(PEP)
001aaj616
(W)
500
8 of 14