BLF573S NXP Semiconductors, BLF573S Datasheet

RF MOSFET Power 300W, HF-500MHz

BLF573S

Manufacturer Part Number
BLF573S
Description
RF MOSFET Power 300W, HF-500MHz
Manufacturer
NXP Semiconductors
Datasheet

Specifications of BLF573S

Minimum Operating Temperature
- 65 C
Mounting Style
Screw
Product Type
RF MOSFET Power
Resistance Drain-source Rds (on)
0.09 Ohms
Transistor Polarity
N-Channel
Configuration
Single
Drain-source Breakdown Voltage
110 V
Gate-source Breakdown Voltage
11 V
Continuous Drain Current
42 A
Maximum Operating Temperature
+ 225 C
Package / Case
LDMOST-3
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
934062175112

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
BLF573S
Manufacturer:
NXP
Quantity:
1 000
Part Number:
BLF573S
Manufacturer:
M/A-COM
Quantity:
5 000
1. Product profile
CAUTION
1.1 General description
1.2 Features
1.3 Applications
A 300 W LDMOS RF power transistor for broadcast applications and industrial, scientific
and medical applications in the HF to 500 MHz band.
Table 1.
I
I
I
I
I
I
I
I
I
I
Mode of operation
CW
BLF573S
HF / VHF power LDMOS transistor
Rev. 02 — 17 February 2009
Typical CW performance at frequency of 225 MHz, a supply voltage of 50 V and an
I
Easy power control
Integrated ESD protection
Excellent ruggedness
High efficiency
Excellent thermal stability
Designed for broadband operation (HF and VHF band)
Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
Industrial, scientific and medical applications
Broadcast transmitter applications
Dq
N
N
N
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
of 900 mA:
Average output power = 300 W
Power gain = 27.2 dB
Efficiency = 70 %
Production test information
f
(MHz)
225
V
(V)
50
DS
P
(W)
300
L
G
(dB)
27.2
p
Product data sheet
(%)
70
D

Related parts for BLF573S

BLF573S Summary of contents

Page 1

... BLF573S HF / VHF power LDMOS transistor Rev. 02 — 17 February 2009 1. Product profile 1.1 General description A 300 W LDMOS RF power transistor for broadcast applications and industrial, scientific and medical applications in the HF to 500 MHz band. Table 1. Mode of operation CW CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and handling ...

Page 2

... Thermal characteristics Parameter Conditions thermal resistance from T case junction to case is measured under RF conditions. Rev. 02 — 17 February 2009 BLF573S HF / VHF power LDMOS transistor Simplified outline Graphic symbol 1 3 [1] 2 Min - 0 Typ [ ...

Page 3

... 375 mA 1. 900 GS(th 18. 3. GS(th 12. MHz MHz MHz = 900 mA Conditions Min P = 300 300 300 BLF573S Typ Max Unit - - V 1.7 2.25 V 1. 420 0. 300 - pF 103 - case Typ Max Unit 27.2 28 © NXP B.V. 2009. All rights reserved ...

Page 4

... NXP Semiconductors Fig 1. 6.1 Ruggedness in class-AB operation The BLF573S is capable of withstanding a load mismatch corresponding to VSWR = through all phases under the following conditions 900 mA Application information 7.1 Impedance information Table 8. Measured Z f MHz 225 Fig 2. BLF573S_2 Product data sheet 800 C oss (pF) ...

Page 5

... TTF (0.1 % failure fraction). = 100 110 120 130 140 150 160 170 180 190 200 C j BLF573S electromigration (I , total device) D Rev. 02 — 17 February 2009 HF / VHF power LDMOS transistor (2) (3) (4) (5) (6) (8) (9) (10) (11 BLF573S 001aaj142 20 (A) © NXP B.V. 2009. All rights reserved ...

Page 6

... Fig 5. Power gain as function of load power; typical values Rev. 02 — 17 February 2009 BLF573S HF / VHF power LDMOS transistor 001aaj613 (7) (6) (5) (1) (2) (3) (4) 100 200 300 225 MHz 500 mA = 700 mA = 900 mA = 1100 mA = 1300 mA = 1500 mA = 1700 mA © NXP B.V. 2009. All rights reserved. ...

Page 7

... 55.2 dBm (330 W) L(1dB) ( 55.8 dBm (380 W) L(3dB) Fig 6. Load power as function of input power; typical values BLF573S_2 Product data sheet (dBm) Ideal ( Rev. 02 — 17 February 2009 BLF573S HF / VHF power LDMOS transistor 001aaj614 ( (dBm) i © NXP B.V. 2009. All rights reserved ...

Page 8

... I (5) I (6) I (7) I (8) I Fig 8. and Figure 10. = 2.2 F/m; height = 0.79 mm; Cu (top/bottom metallization); r Value 100 ; 100 MHz 100 180 pF 220 4 Rev. 02 — 17 February 2009 BLF573S HF / VHF power LDMOS transistor (1) (2) (3) (8) (4) (7) ( 100 200 300 400 224.95 MHz 225 ...

Page 9

... mm mm; length = 13 mm; leads = 100 ; 0 C19 C20 R1 L1 C13 C10 C5 C6 Rev. 02 — 17 February 2009 BLF573S HF / VHF power LDMOS transistor Remarks ( 105 C14 output L7 50 C18 L8 L2 C16 C17 C11 C12 C15 001aaj148 © NXP B.V. 2009. All rights reserved ...

Page 10

... Fig 10. Component layout for class-AB production test circuit BLF573S_2 Product data sheet B1 C9 C20 C10 Rev. 02 — 17 February 2009 BLF573S HF / VHF power LDMOS transistor C19 C13 C14 L2 C17 C11 C12 C16 C15 001aaj149 © NXP B.V. 2009. All rights reserved. C18 ...

Page 11

... REFERENCES JEDEC JEITA Rev. 02 — 17 February 2009 BLF573S HF / VHF power LDMOS transistor 1.70 20.70 9.91 0.25 1.45 9.65 20.45 0.067 0.815 0.390 0.010 0.057 ...

Page 12

... G • Table 7 on page 3: changed the values for G • Section 8.1 on page 6: changed the graphs 20081208 Preliminary data sheet Rev. 02 — 17 February 2009 BLF573S HF / VHF power LDMOS transistor Change notice Supersedes - BLF573S_1 © NXP B.V. 2009. All rights reserved ...

Page 13

... Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. http://www.nxp.com salesaddresses@nxp.com Rev. 02 — 17 February 2009 BLF573S HF / VHF power LDMOS transistor © NXP B.V. 2009. All rights reserved ...

Page 14

... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2009. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com BLF573S All rights reserved. Date of release: 17 February 2009 Document identifier: BLF573S_2 ...

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