BLF573S,112 NXP Semiconductors, BLF573S,112 Datasheet - Page 12

• Manufacturer Part Number: BLF573S,112
• Description: TRANSISTOR RF LDMOS SOT502B
• Manufacturer: NXP Semiconductors

Specifications of BLF573S,112

• Transistor Type: LDMOS
• Frequency: 225MHz
• Gain: 27.2dB
• Voltage - Rated: 110V
• Current Rating: 42A
• Current - Test: 900mA
• Voltage - Test: 50V
• Power - Output: 300W
• Package / Case: SOT502B
• Application: HF/VHF
• Channel Type: N
• Channel Mode: Enhancement
• Continuous Drain Current: 42A
• Drain Source Voltage (max): 110V
• Output Power (max): 300W
• Power Gain (typ)@vds: 27.2@50VdB
• Frequency (max): 225MHz
• Package Type: LDMOST
• Pin Count: 3
• Forward Transconductance (typ): 20S
• Drain Source Resistance (max): 90(Typ)@6Vmohm
• Input Capacitance (typ)@vds: 300@50VpF
• Output Capacitance (typ)@vds: 103@50VpF
• Reverse Capacitance (typ): 2.3@50VpF
• Operating Temp Range: -65C to 225C
• Drain Efficiency (typ): 70%
• Mounting: Surface Mount
• Mode Of Operation: CW
• Number Of Elements: 1
• Vswr (max): 13
• Screening Level: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / Rohs Status: Compliant
• Other names: 934062175112

NXP Semiconductors
10. Abbreviations
11. Revision history
Table 11.
BLF573S_2
Product data sheet
Document ID
BLF573S_2
Modifications:
BLF573S_1
Revision history
Table 10.
Acronym
CW
EDGE
GSM
HF
LDMOS
LDMOST
RF
SMD
TTF
VHF
VSWR
Abbreviations
Release date
20090217
20081208
•
•
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Table 1 on page
Section 1.2 on page
Table 7 on page
Section 8.1 on page
Description
Continuous Wave
Enhanced Data rates for GSM Evolution
Global System for Mobile communications
High Frequency
Laterally Diffused Metal-Oxide Semiconductor
Laterally Diffused Metal-Oxide Semiconductor Transistor
Radio Frequency
Surface Mount Device
Time To Failure
Very High Frequency
Voltage Standing-Wave Ratio
Rev. 02 — 17 February 2009
Data sheet status
Product data sheet
Preliminary data sheet
1: changed the value for G
3: changed the values for G
1: changed the value for G
6: changed the graphs
HF / VHF power LDMOS transistor
p
Change notice
-
p
-
p
BLF573S
© NXP B.V. 2009. All rights reserved.
Supersedes
BLF573S_1
-
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