BLF6G10-200RN,112 NXP Semiconductors, BLF6G10-200RN,112 Datasheet - Page 6

• Manufacturer Part Number: BLF6G10-200RN,112
• Description: TRANSISTOR POWER LDMOS SOT502A
• Manufacturer: NXP Semiconductors

Specifications of BLF6G10-200RN,112

• Transistor Type: LDMOS
• Frequency: 871.5MHz
• Gain: 20dB
• Voltage - Rated: 65V
• Current Rating: 49A
• Current - Test: 1.4A
• Voltage - Test: 28V
• Power - Output: 40W
• Package / Case: SOT502A
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934063283112

NXP Semiconductors
Table 8.
See
[1]
[2]
BLF6G10-200RN_10LS-200RN_2
Product data sheet
Component
C1, C3, C11, C12, C16 multilayer ceramic chip capacitor
C2
C5, C6
C7, C8, C9, C10
C13, C14
C15
C17, C18
L1
Q1
R1, R2, R3
Fig 7.
American Technical Ceramics type 100B or capacitor of same quality.
TDK or capacitor of same quality.
Figure 6
The striplines are on a double copper-clad Taconic RF35 Printed-Circuit Board (PCB) with ε
See
The drawing is not to scale.
Component layout
List of components
and
Table 8
Figure
for list of components.
7.
Description
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
electrolytic capacitor
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
electrolytic capacitor
ferrite SMD bead
BLF6G10LS-200RN
SMD resistor
R1
C1
C3
800 -1000 MHz
C2
NXP
V1.0
IN
Rev. 02 — 21 January 2010
R2
Value
68 pF
13 pF
10 pF
220 nF
4.7 μF; 50 V
1.5 pF
220 μF; 63 V
-
-
9.1 Ω; 0.1 W
Q1
800 -1000 MHz
C5
C6
C7
NXP
OUT
V1.0
BLF6G10(LS)-200RN
C8
[1]
[1]
[1]
[2]
[1]
C9
C11 C13
C10
Remarks
solder vertically
solder vertically
solder vertically
Vishay VJ1206Y224KXB
solder vertically
Ferroxcube BDS 3/3/4.6-4S2 or equivalent
C12
C14
C17
r
= 3.5 and thickness = 0.76 mm.
Power LDMOS transistor
L1
C18
© NXP B.V. 2010. All rights reserved.
R3
C15
C16
001aah524
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