BLF6G10-160RN,112 NXP Semiconductors, BLF6G10-160RN,112 Datasheet
BLF6G10-160RN,112
Specifications of BLF6G10-160RN,112
Related parts for BLF6G10-160RN,112
BLF6G10-160RN,112 Summary of contents
Page 1
... BLF6G10-160RN; BLF6G10LS-160RN Power LDMOS transistor Rev. 02 — 21 January 2010 1. Product profile 1.1 General description 160 W LDMOS power transistor for base station applications at frequencies from 700 MHz to 1000 MHz. Table 1. Typical RF performance at T Mode of operation 2-carrier W-CDMA [1] Test signal: 3GPP; test model 1; 64 DPCH; PAR = 7 0.01 % probability on CCDF per carrier; carrier spacing 5 MHz ...
Page 2
... MHz to 1000 MHz frequency range. 2. Pinning information Table 2. Pin BLF6G10-160RN (SOT502A BLF6G10LS-160RN (SOT502B [1] Connected to flange. 3. Ordering information Table 3. Type number BLF6G10-160RN BLF6G10LS-160RN - 4. Limiting values Table 4. In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol stg T j BLF6G10-160RN_10LS-160RN_2 Product data sheet Pinning ...
Page 3
... Symbol P L(AV η D ACPR 7.1 Ruggedness in class-AB operation The BLF6G10-160RN and BLF6G10LS-160RN are capable of withstanding a load mismatch corresponding to VSWR = through all phases under the following conditions: V BLF6G10-160RN_10LS-160RN_2 Product data sheet Thermal characteristics Parameter Conditions thermal resistance from T junction to case P ...
Page 4
... MHz One-tone CW power gain and drain efficiency as functions of load power; typical values 001aah476 60 η D (%) 120 160 200 P (W) L(PEP) = 959.95 MHz; 1 Fig 3. Rev. 02 — 21 January 2010 BLF6G10(LS)-160RN Power LDMOS transistor 001aah475 60 η D η D (%) 120 160 200 P ( IMD (dBc) − ...
Page 5
... D (%) (W) L(AV) = 952.5 MHz; 1 Fig C12 C10 C14 Rev. 02 — 21 January 2010 BLF6G10(LS)-160RN Power LDMOS transistor 0 ACPR (dBc) −20 −40 −60 − 1200 mA 952.5 MHz 957.5 MHz; carrier spacing 5 MHz. 2 2-carrier W-CDMA adjacent channel power ratio as function of average load power; ...
Page 6
... Component layout Figure 6 and Figure 7) Value 68 pF 560 pF 330 nF 1.5 μ 4.5 μ 2. μ 220 μF - 4.7 Ω; 0.1 W 6.8 Ω; 0.1 W Rev. 02 — 21 January 2010 BLF6G10(LS)-160RN Power LDMOS transistor − C7 C11 C16 + R2 C3 C13 Remarks [1] [1] [2] [2] [2] [1] [1] Ferroxcube BDS 3/3/8.9-4S2 or equivalent © ...
Page 7
... REFERENCES JEDEC JEITA Rev. 02 — 21 January 2010 BLF6G10(LS)-160RN Power LDMOS transistor 3.38 1.70 34.16 9.91 27.94 0.25 3 ...
Page 8
... REFERENCES JEDEC JEITA Rev. 02 — 21 January 2010 BLF6G10(LS)-160RN Power LDMOS transistor 1.70 20.70 9.91 0.25 1.45 20.45 9.65 0.067 0.815 0.390 0.010 0.057 ...
Page 9
... LDMOS LDMOST PAR PDPCH RF SMD VSWR W-CDMA 11. Revision history Table 10. Revision history Document ID BLF6G10-160RN_10LS-160RN_2 20100121 Modifications: BLF6G10-160RN_10LS-160RN_1 20090120 BLF6G10-160RN_10LS-160RN_2 Product data sheet Abbreviations Description Third Generation Partnership Project Complementary Cumulative Distribution Function Code Division Multiple Access Continuous Wave Dedicated Physical CHannel ...
Page 10
... Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. http://www.nxp.com salesaddresses@nxp.com Rev. 02 — 21 January 2010 BLF6G10(LS)-160RN Power LDMOS transistor © NXP B.V. 2010. All rights reserved ...
Page 11
... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2010. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Document identifier: BLF6G10-160RN_10LS-160RN_2 All rights reserved. Date of release: 21 January 2010 ...