BLF6G10-200RN,112 NXP Semiconductors, BLF6G10-200RN,112 Datasheet - Page 3

• Manufacturer Part Number: BLF6G10-200RN,112
• Description: TRANSISTOR POWER LDMOS SOT502A
• Manufacturer: NXP Semiconductors

Specifications of BLF6G10-200RN,112

• Transistor Type: LDMOS
• Frequency: 871.5MHz
• Gain: 20dB
• Voltage - Rated: 65V
• Current Rating: 49A
• Current - Test: 1.4A
• Voltage - Test: 28V
• Power - Output: 40W
• Package / Case: SOT502A
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934063283112

NXP Semiconductors
5. Thermal characteristics
6. Characteristics
7. Application information
BLF6G10-200RN_10LS-200RN_2
Product data sheet
7.1 Ruggedness in class-AB operation
Table 5.
Table 6.
T
Table 7.
Mode of operation: 2-carrier W-CDMA; PAR 7.5 dB at 0.01 % probability on CCDF; 3GPP test
model 1; 1-64 PDPCH; f
RF performance at V
class-AB production test circuit.
The BLF6G10-200RN and BLF6G10LS-200RN are enhanced rugged devices and are
capable of withstanding a load mismatch corresponding to VSWR = 10 : 1 through all
phases under the following conditions: V
f = 894 MHz.
Symbol
R
Symbol Parameter
V
V
V
I
I
I
g
R
C
Symbol
P
G
IRL
ACPR
η
DSS
DSX
GSS
j
fs
D
(BR)DSS
GS(th)
GSq
L(AV)
th(j-case)
DS(on)
rs
p
= 25
°
C unless otherwise specified.
drain-source breakdown
voltage
gate-source threshold voltage
gate-source quiescent voltage V
drain leakage current
drain cut-off current
gate leakage current
forward transconductance
drain-source on-state
resistance
feedback capacitance
Parameter
average output power
power gain
input return loss
drain efficiency
adjacent channel power ratio
Thermal characteristics
Characteristics
Application information
Parameter
thermal resistance from
junction to case
DS
= 28 V; I
1
Rev. 02 — 21 January 2010
= 871.5 MHz; f
Dq
= 1400 mA; T
Conditions
T
P
2
case
L
= 876.5 MHz; f
Conditions
V
V
I
V
V
V
V
V
V
I
V
f = 1 MHz
= 40 W
D
D
GS
DS
DS
GS
GS
DS
GS
DS
GS
GS
DS
= 1620 mA
= 9.45 A
= 80 °C;
= 0 V; I
= 10 V; I
= 28 V;
= 0 V; V
= V
= 10 V
= 11 V; V
= 10 V; I
= V
= 0 V; V
= 28 V; I
case
BLF6G10(LS)-200RN
GS(th)
GS(th)
P
Conditions
P
P
P
= 25
L(AV)
L(AV)
L(AV)
L(AV)
D
DS
DS
D
D
= 0.9 mA
+ 3.75 V;
DS
+ 3.75 V;
3
Dq
= 270 mA
= 9.45 A
= 40 W
= 40 W
= 40 W
= 40 W
°
= 886.5 MHz; f
Type
BLF6G10-200RN
BLF6G10LS-200RN
= 28 V
= 28 V;
C; unless otherwise specified; in a
= 0 V
= 1400 mA; P
Power LDMOS transistor
Min
-
19
-
25
-
Min
65
1.4
1.7
-
40
-
11
0.012 0.07
-
4
= 891.5 MHz;
L
= 200 W;
Typ
40
20
−6.4
28.5
−39.4 −36
Typ
-
2.0
2.2
-
48
-
18
3
© NXP B.V. 2010. All rights reserved.
Typ
0.50
0.35
-
-
Max
-
2.4
2.7
4.2
-
420
26
0.093 Ω
-
Max
-
−4.5
Unit
K/W
K/W
3 of 11
Unit
W
dB
dB
%
dBc
Unit
V
V
V
μA
A
nA
S
pF