blf6g10-160rn NXP Semiconductors, blf6g10-160rn Datasheet

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blf6g10-160rn

Manufacturer Part Number
blf6g10-160rn
Description
Power Ldmos Transistor
Manufacturer
NXP Semiconductors
Datasheet

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1. Product profile
CAUTION
1.1 General description
1.2 Features
160 W LDMOS power transistor for base station applications at frequencies from
800 MHz to 1000 MHz.
Table 1.
Typical RF performance at T
[1]
I
I
I
I
I
I
I
I
I
Mode of operation
2-carrier W-CDMA
BLF6G10-160RN;
BLF6G10LS-160RN
Power LDMOS transistor
Rev. 01 — 20 January 2009
Typical 2-carrier W-CDMA performance at frequencies of 920 MHz and 960 MHz, a
supply voltage of 32 V and an I
Easy power control
Integrated ESD protection
Excellent ruggedness
High efficiency
Excellent thermal stability
Designed for broadband operation (800 MHz to 1000 MHz)
Internally matched for ease of use
Compliant to Directive 2002/95/EC, regarding restriction of hazardous substances
(RoHS)
Test signal: 3GPP; test model 1; 64 DPCH; PAR = 7.5 dB at 0.01 % probability on CCDF per carrier; carrier
spacing 5 MHz.
N
N
N
N
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
Average output power = 32 W
Power gain = 22.5 dB
Efficiency = 27 %
ACPR = 41 dBc
Typical performance
f
(MHz)
920 to 960
case
= 25 C in a class-AB production test circuit.
Dq
of 1200 mA:
V
(V)
32
DS
P
(W)
32
L(AV)
G
(dB)
22.5
p
Product data sheet
(%)
27
D
ACPR
(dBc)
41
[1]

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blf6g10-160rn Summary of contents

Page 1

... BLF6G10-160RN; BLF6G10LS-160RN Power LDMOS transistor Rev. 01 — 20 January 2009 1. Product profile 1.1 General description 160 W LDMOS power transistor for base station applications at frequencies from 800 MHz to 1000 MHz. Table 1. Typical RF performance at T Mode of operation 2-carrier W-CDMA [1] Test signal: 3GPP; test model 1; 64 DPCH; PAR = 7 0.01 % probability on CCDF per carrier; carrier spacing 5 MHz ...

Page 2

... NXP Semiconductors 1.3 Applications I RF power amplifiers for GSM, GSM EDGE, W-CDMA and CDMA base stations and multi carrier applications in the 800 MHz to 1000 MHz frequency range. 2. Pinning information Table 2. Pin BLF6G10-160RN (SOT502A BLF6G10LS-160RN (SOT502B [1] Connected to flange. 3. Ordering information Table 3 ...

Page 3

... Symbol P L(AV ACPR 7.1 Ruggedness in class-AB operation The BLF6G10-160RN and BLF6G10LS-160RN are capable of withstanding a load mismatch corresponding to VSWR = through all phases under the following conditions: V BLF6G10-160RN_10LS-160RN_1 Product data sheet Thermal characteristics Parameter Conditions thermal resistance from T case ...

Page 4

... 1200 mA 960.05 MHz. 2 Fig 2. Two-tone CW power gain and drain efficiency as functions of peak envelope load power; typical values BLF6G10-160RN_10LS-160RN_1 Product data sheet (dB 1200 mA 960 MHz One-tone CW power gain and drain efficiency as functions of load power; ...

Page 5

... MHz; carrier spacing 5 MHz. 2 Fig 4. 2-carrier W-CDMA power gain and drain efficiency as functions of average load power; typical values 8. Test information V GG C15 R1 input C14 50 C1 Fig 6. Test circuit for operation at 900 MHz BLF6G10-160RN_10LS-160RN_1 Product data sheet 001aaj516 50 D ACPR (%) (dBc (W) L(AV) = 952.5 MHz ...

Page 6

... L1 ferrite SMD bead R1 SMD resistor R2 SMD resistor [1] American Technical Ceramics type 100B or capacitor of same quality. [2] TDK or capacitor of same quality. BLF6G10-160RN_10LS-160RN_1 Product data sheet C12 C10 C15 C2 C1 C14 The striplines are on a double copper-clad Taconic RF35 Printed-Circuit Board (PCB) with and thickness = 0 ...

Page 7

... DIMENSIONS (millimetre dimensions are derived from the original inch dimensions UNIT 4.72 12.83 20.02 0.15 mm 3.43 12.57 0.08 19.61 0.186 0.505 0.006 0.788 inches 0.495 0.135 0.003 0.772 OUTLINE VERSION IEC SOT502A Fig 8. Package outline SOT502A BLF6G10-160RN_10LS-160RN_1 Product data sheet scale 19.96 9.50 9.53 1.14 19.94 5.33 19 ...

Page 8

... DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) c UNIT 4.72 12.83 0.15 20.02 mm 3.43 12.57 0.08 19.61 0.505 0.186 0.006 0.788 inches 0.495 0.135 0.003 0.772 OUTLINE VERSION IEC SOT502B Fig 9. Package outline SOT502B BLF6G10-160RN_10LS-160RN_1 Product data sheet scale 19.96 9.50 9.53 1.14 19.94 5 ...

Page 9

... PDPCH RF SMD VSWR W-CDMA 11. Revision history Table 10. Revision history Document ID BLF6G10-160RN_10LS-160RN_1 BLF6G10-160RN_10LS-160RN_1 Product data sheet Abbreviations Description Third Generation Partnership Project Complementary Cumulative Distribution Function Code Division Multiple Access Continuous Wave Dedicated Physical CHannel Enhanced Data rates for GSM Evolution Global System for Mobile communications ...

Page 10

... Contact information For more information, please visit: For sales office addresses, please send an email to: BLF6G10-160RN_10LS-160RN_1 Product data sheet [3] Definition This document contains data from the objective specification for product development. ...

Page 11

... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2009. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Document identifier: BLF6G10-160RN_10LS-160RN_1 All rights reserved. Date of release: 20 January 2009 ...

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