BLF6G10-160RN,112 NXP Semiconductors, BLF6G10-160RN,112 Datasheet - Page 4

• Manufacturer Part Number: BLF6G10-160RN,112
• Description: TRANSISTOR POWER LDMOS SOT502A
• Manufacturer: NXP Semiconductors

Specifications of BLF6G10-160RN,112

• Transistor Type: LDMOS
• Frequency: 922.5MHz
• Gain: 22.5dB
• Voltage - Rated: 65V
• Current Rating: 39A
• Current - Test: 1.2A
• Voltage - Test: 32V
• Power - Output: 32W
• Package / Case: SOT502A
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934063281112

NXP Semiconductors
BLF6G10-160RN_10LS-160RN_2
Product data sheet
Fig 2.
(dB)
G
p
24
22
20
18
0
V
f
Two-tone CW power gain and drain efficiency
as functions of peak envelope load power;
typical values
2
DS
= 960.05 MHz.
= 32 V; I
40
7.2 One-tone CW
7.3 Two-tone CW
G
η
D
p
Dq
= 1200 mA; f
80
Fig 1.
120
V
One-tone CW power gain and drain efficiency as functions of load power;
typical values
1
DS
= 959.95 MHz;
= 32 V; I
160
P
001aah476
L(PEP)
Dq
(dB)
(W)
Rev. 02 — 21 January 2010
G
= 1200 mA; f = 960 MHz.
200
p
24
22
20
18
60
40
20
0
(%)
0
η
D
40
Fig 3.
(dBc)
IMD
−20
−40
−60
−80
80
0
0
V
f
Intermodulation distortion as a function of
peak envelope load power; typical values
2
DS
= 960.05 MHz.
BLF6G10(LS)-160RN
= 32 V; I
120
Dq
160
80
= 1200 mA; f
001aah475
η
G
P
D
p
L
(W)
200
Power LDMOS transistor
60
40
20
0
(%)
η
1
160
D
= 959.95 MHz;
P
L(PEP)
© NXP B.V. 2010. All rights reserved.
IMD3
IMD5
IMD7
001aah477
(W)
240
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