BLF6G10-160RN,112 NXP Semiconductors, BLF6G10-160RN,112 Datasheet - Page 11

• Manufacturer Part Number: BLF6G10-160RN,112
• Description: TRANSISTOR POWER LDMOS SOT502A
• Manufacturer: NXP Semiconductors

Specifications of BLF6G10-160RN,112

• Transistor Type: LDMOS
• Frequency: 922.5MHz
• Gain: 22.5dB
• Voltage - Rated: 65V
• Current Rating: 39A
• Current - Test: 1.2A
• Voltage - Test: 32V
• Power - Output: 32W
• Package / Case: SOT502A
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934063281112

NXP Semiconductors
14. Contents
1
1.1
1.2
1.3
2
3
4
5
6
7
7.1
7.2
7.3
7.4
8
9
10
11
12
12.1
12.2
12.3
12.4
13
14
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Pinning information . . . . . . . . . . . . . . . . . . . . . . 2
Ordering information . . . . . . . . . . . . . . . . . . . . . 2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2
Thermal characteristics . . . . . . . . . . . . . . . . . . 3
Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Application information. . . . . . . . . . . . . . . . . . . 3
Test information . . . . . . . . . . . . . . . . . . . . . . . . . 5
Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 7
Abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . 9
Legal information. . . . . . . . . . . . . . . . . . . . . . . 10
Contact information. . . . . . . . . . . . . . . . . . . . . 10
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Ruggedness in class-AB operation . . . . . . . . . 3
General description . . . . . . . . . . . . . . . . . . . . . 1
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
One-tone CW . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Two-tone CW . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2-carrier W-CDMA . . . . . . . . . . . . . . . . . . . . . . 5
Data sheet status . . . . . . . . . . . . . . . . . . . . . . 10
Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2010.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [e-mail]
BLF6G10(LS)-160RN
Document identifier: BLF6G10-160RN_10LS-160RN_2
Power LDMOS transistor
Date of release: 21 January 2010
All rights reserved.