BLF7G20L-90P,118 NXP Semiconductors, BLF7G20L-90P,118 Datasheet - Page 6

• Manufacturer Part Number: BLF7G20L-90P,118
• Description: TRANSISTOR PWR LDMOS ACC-4L
• Manufacturer: NXP Semiconductors

Specifications of BLF7G20L-90P,118

• Transistor Type: LDMOS
• Frequency: 1.81GHz ~ 1.88GHz
• Gain: 19dB
• Voltage - Rated: 65V
• Current Rating: 18A
• Current - Test: 550mA
• Voltage - Test: 28V
• Power - Output: 84W
• Package / Case: SOT-1121A
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934064087118

NXP Semiconductors
BLF7G20L-90P_7G20LS-90P_1
Product data sheet
Fig 7.
(dB)
G
p
21
19
17
15
0
V
Single carrier IS-95 power gain and drain
efficiency as function of load power;
typical values
DS
G
η
D
p
= 28 V; I
7.6 Single carrier W-CDMA
Dq
16
= 600 mA; f = 1880 MHz.
3GPP; test model 1; 64 DPCH; PAR = 7.2 dB at 0.01 % probability on CCDF.
Channel bandwidth is 3.84 MHz.
Fig 9. Single carrier IS-95 peak-to-average power ratio as a function of load power;
typical values
V
32
DS
= 28 V; I
P
All information provided in this document is subject to legal disclaimers.
L
001aal873
(W)
BLF7G20L-90P; BLF7G20LS-90P
Dq
PAR
= 600 mA; f = 1880 MHz.
48
Rev. 01 — 28 April 2010
11
10
60
40
20
0
9
8
7
6
5
4
(%)
η
0
D
Fig 8.
ACPR
(dBc)
16
−30
−40
−50
−60
−70
−80
0
V
Single carrier IS-95 ACPR at 885 kHz and at
1980 kHz as function of load power;
typical values
DS
= 28 V; I
32
Dq
P
16
= 600 mA; f = 1880 MHz.
L
001aal875
(W)
48
Power LDMOS transistor
32
ACPR
ACPR
© NXP B.V. 2010. All rights reserved.
P
L
001aal874
(W)
1980k
885k
48
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