BLF7G20L-90P,118 NXP Semiconductors, BLF7G20L-90P,118 Datasheet - Page 3

• Manufacturer Part Number: BLF7G20L-90P,118
• Description: TRANSISTOR PWR LDMOS ACC-4L
• Manufacturer: NXP Semiconductors

Specifications of BLF7G20L-90P,118

• Transistor Type: LDMOS
• Frequency: 1.81GHz ~ 1.88GHz
• Gain: 19dB
• Voltage - Rated: 65V
• Current Rating: 18A
• Current - Test: 550mA
• Voltage - Test: 28V
• Power - Output: 84W
• Package / Case: SOT-1121A
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934064087118

NXP Semiconductors
5. Thermal characteristics
6. Characteristics
7. Test information
BLF7G20L-90P_7G20LS-90P_1
Product data sheet
7.1 Ruggedness in class-AB operation
Table 5.
Table 6.
T
Table 7.
f = 1805 MHz and 1880 MHz; RF performance at V
2 sections combined unless otherwise specified; in a class-AB production test circuit.
The BLF7G20L-90P and BLF7G20LS-90P are capable of withstanding a load mismatch
corresponding to VSWR = 10 : 1 through all phases under the following conditions:
V
Symbol
R
Symbol Parameter
V
V
I
I
I
g
R
Symbol
Mode of operation: GSM EDGE; P
G
RL
η
ACPR
ACPR
EVM
EVM
Mode of operation: CW; P
G
η
DSS
DSX
GSS
j
DS
fs
D
D
(BR)DSS
GS(th)
th(j-c)
DS(on)
p
p
= 25
in
= 28 V; I
rms
M
400k
600k
°
C; per section unless otherwise specified.
drain-source breakdown voltage
gate-source threshold voltage
drain leakage current
drain cut-off current
gate leakage current
forward transconductance
drain-source on-state resistance
Parameter
thermal resistance from junction to case
Thermal characteristics
Characteristics
Application information
Parameter
power gain
input return loss
drain efficiency
adjacent channel power ratio (400 kHz)
adjacent channel power ratio (600 kHz)
RMS EDGE signal distortion error
peak EDGE signal distortion error
power gain
drain efficiency
Dq
= 550 mA; P
All information provided in this document is subject to legal disclaimers.
BLF7G20L-90P; BLF7G20LS-90P
Rev. 01 — 28 April 2010
L(AV)
L
= 84 W
= 90 W (CW); f = 1805 MHz.
L(AV)
= 40 W
Conditions
V
V
V
V
V
V
V
V
I
D
GS
DS
GS
GS
DS
GS
DS
GS
= 1.75 A
= 10 V; I
= 10 V
= 10 V; I
= 0 V; I
= 0 V; V
= V
= 11 V; V
= V
DS
GS(th)
GS(th)
Conditions
= 28 V; I
Conditions
T
D
case
DS
D
D
= 0.5 mA
+ 3.75 V;
+ 3.75 V;
DS
= 50 mA
= 2.5 A
= 28 V
= 80 °C; P
= 0 V
Dq
= 550 mA; T
Power LDMOS transistor
L
Min Typ
18.3 19.5
-
38
-
-
-
17.8 19
51
-
= 90 W
Min Typ
65
1.5
-
8.2
-
-
-
case
© NXP B.V. 2010. All rights reserved.
−15
41
−61
−74
2.5
8
54
-
1.9
-
9.5
-
3.8
0.28
= 25
Max
-
−8
-
−58
−70.5 dBc
3.8
12.5
-
-
Typ
0.49 K/W
°
Max Unit
-
2.3
2
-
200
-
-
C;
3 of 14
Unit
V
V
μA
A
nA
S
Ω
Unit
dB
dB
%
dBc
%
%
dB
%